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Photodetector Arrays in Laser-Recrystallized Silicon Integrated with an Optical Waveguide

Published online by Cambridge University Press:  25 February 2011

R.W. Wu ,
H.A. Timlin ,
H.E. Jackson  and
J.T. Boyd
R.W. Wu
Affiliation:
Solid State Electronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0030
H.A. Timlin
Affiliation:
Solid State Electronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0030
H.E. Jackson
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, Ohio 452210011
J.T. Boyd
Affiliation:
Solid State Electronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0030
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Abstract

Integrated detection of light propagating in an optical waveguide by a photodetector array fabricated directly on the waveguide surface is demonstrated. Laser recrystallization of LPCVD polysilicon patterned with periodically-spaced anti-reflection stripes is utilized. Lateral p-i-n photodiode elements formed by ion implantation are characterized by reverse leakage currents of < 10−11 amp and a typical breakdown voltage of 50 volts. Optical response is found to be linear over a dynamic range of greater than 55 dB.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 675
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. Dutta, S., Jackson, H.E., and Boyd, J.T., J. Appl. Phys., 52, 3873 (1981).Google Scholar
2. Dutta, S., Jackson, H.E., Boyd, J.T., Hickernell, F.S., and Davis, R.L., Appl. Phys. Lett., 39, 206 (1981).Google Scholar
3. Dutta, S., Jackson, H.E., Boyd, J.T., Davis, R.L., and Hickernell, F.S., IEEE J. Quant. Electron. QE–18, 800 (1982).Google Scholar
4. Yumoto, J., Yajima, H., Seki, Y., and Schimada, J., Appl. Phys. Lett., 40, 632 (1982).Google Scholar
5. Reedy, R.E., and Lee, S.H., Appl. Phys. Lett., 44, 19 (1984).Google Scholar
6. Colinge, J.P., Demoulin, E., Bensahel, D., and Auvert, G., Appl. Phys. Lett., 41, 346 (1982).Google Scholar
7. Fan, C.L., and Boyd, J.T., Appl. Opt., 22, 3297 (1983).Google Scholar
8. Eggermont, G.E.J., and de Groot, J.G., IEEE Electron. Device Lett. EDL–3, 156 (1982).Google Scholar