Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-23T15:02:41.189Z Has data issue: false hasContentIssue false

Photocurrent Profile in a-SiC:H Monolithic Tandem Pinpin and Pinip Photodiodes

Published online by Cambridge University Press:  01 February 2011

Alessandro Fantoni
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal
Manuela Vieira
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal, +351218317290, +351218317114
Yuri Vygranenko
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal
Get access

Abstract

We present in this paper results about the analysis of photocurrent and spectral response in a-SiC:H/ a-Si:H pinpin and pinip structures. Our experiments and analysis reveal the photocurrent profile to have a strong nonlinear dependence on the externally applied bias and on the light absorption profile, i.e. on the incident light wavelength and intensity. Our interpretation points out the cause of such effect to a self biasing of the junctions under certain unbalanced light generation of carriers and to an asymmetric reaction of the internal electric fields to the externally imposed bias. The possibility to relate such a behavior to the light intensity and wavelength indicates realistic hypothesis of using these structures and this effect for color recognition sensors.

We present results about the experimental characterization of the structures and numerical simulations obtained with the program ASCA. Considerations about electrical field profiles and inversion layers will be taken into account to explain the optical and voltage bias dependence of the spectral response. Our results show that in both structures the application of an external electrical bias (forward or reverse) mainly influences the field distribution within the less photo excited sub-cell.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Cesare, G. de, Irrera, F., Lemmi, F., Palma, F., IEEE Trans. on Electron Devices, 42, pp. 835840 (1995)Google Scholar
2 Zhu, A., Coors, S., Schneider, B., Rieve, P., Bohm, M., IEEE Trans. on Electron Devices, 45, pp. 13931398 (1998).Google Scholar
3 Topic, M., Stiebig, H., Knipp, D., Smole, F., Furlan, J., Wagner, H., J. Non Cryst. Solids 266-269 pp. 11781182 (2000).Google Scholar
4 Vieira, M., Fernandes, M., Martins, J., Louro, P., Maçarico, A., Schwarz, R., Schubert, M., IEEE Sensor Journal, 1, no.2 (August, 2001) pp. 158167.Google Scholar
5 Fernandes, M, Vieira, M, Martins, R, Journal of Non-Crystalline Solids 352 (9-20): 18011804.Google Scholar
6 Louro, P., Vieira, M., Fantoni, A., Fernandes, M., Carvalho, C. N., Lavareda, G., Sensors and Actuators A, 123–124, pp. 326330 (2005)Google Scholar
7 Martins, J., Fernandes, M., Fantoni, A., and Vieira, M., J. Non Cryst. Solids, (2006).Google Scholar
8 Fantoni, A., Vieira, M., Martins, R.,Math.Comput.Simul. 49 (1999)Google Scholar
9 Ambrosone, G., Coscia, U., Ferrero, S., Giorgis, F., Mandracci, P. and Pirri, C. F., Philosophical Magazine B, 82, pp. 3546 (2002)Google Scholar
10 Fantoni, A., Louro, P., Fernandes, M., Vieira, M., Lavareda, G., Carvalho, C.N., Sensors & Actuators: A. Physical, 123-124, pp.343348 (2006)Google Scholar