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PHOTOCONDUCTIVITY, PHOTOREFLECTANCE AND PHOTOLUMINESCENCE OF GaAs-AlAs MULTIPLE QUANTUM WELLS

Published online by Cambridge University Press:  28 February 2011

H. NEFF ,
K. J. BACHMANN  and
W. D. LAIDIG
H. NEFF
Affiliation:
Departments of Chemistry
K. J. BACHMANN
Affiliation:
Departments of Chemistry Materials Engineering
W. D. LAIDIG
Affiliation:
Electrical and Computer Engineering North Carolina State University Raleigh, North Carolina 27695–8204
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Abstract

Employing temperature dependent photoconductivity, photoluminescence and photoreflectivity measurements, we have analyzed a GaAs-AlAs multiple quantum well. The above optical techniques clearly resolve the fundamental inter-subband transitions, including heavy hole-light hole splittings. At T < 60K an anomalously high photoconductivity was discovered below the direct inter-subband transitions and is attributed tentatively to the presence of extrinsic interface states within the bandgap. For T > l00K the fundamental indirect transition was discovered and associated with LO (L) - phonon absorption.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 289
Copyright
Copyright © Materials Research Society 1986

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References

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