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Photoconductivity in Vacuum Deposited Films of Silicon-Based Polymers

Published online by Cambridge University Press:  15 February 2011

H. Okumoto ,
M. Shimomura ,
N. Minami  and
Y. Tanabe
H. Okumoto
Affiliation:
Department of Polymer Physics, National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305, Japan
M. Shimomura
Affiliation:
Department of Polymer Physics, National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305, Japan
N. Minami
Affiliation:
Department of Polymer Physics, National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305, Japan
Y. Tanabe
Affiliation:
Department of Polymer Physics, National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305, Japan
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Abstract

Silicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 444: Symposium I – Materials for Mechanical and Optical Microsystems , 1996 , 191
Copyright
Copyright © Materials Research Society 1997

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