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Photoconductivity and Photoluminescence of Amorphous Carbon Nitride a-CNx Films Prepared by the Layer-by-Layer Method

Published online by Cambridge University Press:  10 February 2011

T. Katsuno ,
S. Nitta ,
H. Habuchi ,
T. Iwasaki ,
T. Itoh  and
S. Nonomura
T. Katsuno
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu, Japan 501-1193
S. Nitta
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu, Japan 501-1193
H. Habuchi
Affiliation:
Department of Electrical Engineering, Gifu National College of Technology, Shinsei-Chou, Motosu, Gifu, Japan 501-0495
T. Iwasaki
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu, Japan 501-1193
T. Itoh
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu, Japan 501-1193
S. Nonomura
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu, Japan 501-1193
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Abstract

Amorphous carbon nitride films a-CNx, which made in our laboratory, show high photosensitivity Ps that is a ratio of photoconductivity σp and dark-electrical conductivity σd Maximum Ps of a-CNx is about 5×106 which is about 50 times larger than that of hydrogenated amorphous silicon a-Si:H.

We have succeeded to observe photoconductivity spectra where photoconductivity starts nearly at 2 eV and saturates at 3 eV. Then σp increase again at 3.7 eV up to 6.2 eV. The dependence of σp on excitation energy and intensity is observed. Photoluminescence spectrum is also obtained which have a spectrum from infrared of 0.8 eV up to ultraviolet of 3.5 eV. Using these data together with photothermal deflection spectra, we have presented a refined model of the electronic density of states for LLa-CNx.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 593: Symposium U – Amorphous & Nanostructured Carbon , 1999 , 499
Copyright
Copyright © Materials Research Society 2000

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References

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