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Photoconductive Properties Of A GaAs-A1GaAs Quantumwell Infrared Photodetector

Published online by Cambridge University Press:  21 February 2011

Toshiyuki Ueda ,
Koji Shinohara  and
Yoshihiro Miyamoto
Toshiyuki Ueda
Affiliation:
Fijitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, 243–01 Japan
Koji Shinohara
Affiliation:
Fijitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, 243–01 Japan
Yoshihiro Miyamoto
Affiliation:
Fijitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, 243–01 Japan
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Abstract

We investigated the conduction mechanism and performance of GaAs-A1GaAs quantum-well infrared photodetectors and proposed a conduction model consisting of Poole-Frenkel-like emission from wells and carrier relaxation wells. The model agrees with the measured photocurrent and dark current. The detector's noise current is given by a simple shot noise formula. Analysis has shown that the photocurrent and the noise current are inversely proportional to the barrier width, while the dark current is inversely proportional to the square of the barrier width.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 243
Copyright
Copyright © Materials Research Society 1992

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References

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