Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T15:32:39.026Z Has data issue: false hasContentIssue false
  • English
  • Français

Photo-Chemical Changes of Aluminium Films on Silicon

Published online by Cambridge University Press:  21 February 2011

A. J. Kellock ,
J. S. Williams ,
G. L. Nyberg  and
J. Liesegang
A. J. Kellock
Affiliation:
Microelectronics Technology Centre, RMIT Melbourne 3001, Australia
J. S. Williams
Affiliation:
Microelectronics Technology Centre, RMIT Melbourne 3001, Australia
G. L. Nyberg
Affiliation:
Research Centre for Electron Spectroscopy, LaTrobe University, Bundoora 3083, Australia
J. Liesegang
Affiliation:
Research Centre for Electron Spectroscopy, LaTrobe University, Bundoora 3083, Australia
Get access

Abstract

X-ray Photoelectron Spectroscopy and Rutherford Backscattering Spectroscopy with channeling are employed to study surface and interface changes resulting from irradiation of thin Al films on Si-SiO2 substrates using < 6eV visible photons. Results indicati that surface oxidation and bonding rearrangements at the Al-SiO2-Si interface can take place at room temperature under photon bombardment. These changes are correlated with enhanced adhesion and modification of film etch properties which are also a result of photon irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 119: Symposium F – Adhesions in Solids , 1988 , 127
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Griffith, J.E., Qiu, Y., Tombrello, T.A., Nucl.Instrum.Method 198, 607 (1982)CrossRefGoogle Scholar
2. Mitchell, I.V., Nyberg, G.L., Elliman, R.G., Appl.Phys.Lett. 45, 137 (1984)Google Scholar
3. Baglin, J.E.E., Clark, G.J., Bottiger, J. in Thin Films and Interfaces, edited by Ho, P.S., Tu, K.N. (Mater. Res. Soc. Proc. 27, North-Holland, NY, 1984), p.162 Google Scholar
4. Kellock, A.J., Nyberg, G.L., Williams, J.S., Vacuum 35, 625 (1985)Google Scholar
5. Kellock, A.J., Liesegang, J., Nyberg, G.L., Williams, J.S. in Photon. Beam and Plasma Stimulated Chemical Processes at Surfaces, edited by Donnelly, V.M., Herman, I.P., Hirose, M. (Mater. Res. Soc. Proc. 75, Pittsburgh, PA 1987) p.179 Google Scholar
6. Robbins, H., Schwartz, B., J.Electrochem. Soc. 106, 505 (1959)Google Scholar
7. Yu, C.F., Podlesnik, D.V., Schmidt, M.T., Gilgen, H.H., Osgood, R.M., Chem.Phys.Lett. (Neth) 130, 301 (1986)Google Scholar
8. Mitchell, I.V., Williams, J.S., Sood, D.K., Short, K.T., Johnson, S.T., Elliman, R.G. in Thin Films and Interfaces II, edited by Baglin, J.E.E., Campbell, D.R., Chu, W.K. (Mater. Res. Soc. Proc. 25, North-Holland, NY 1983) p.189 Google Scholar
9. Stengl, G., Kaitna, R., Loschner, H., Wolf, P., R.Sacher, J.Vac.Sci.Technol. 16, 1883 (1979)Google Scholar
10. Barron, P.F., Frost, R.L., Skiemstad, J.O., Koppi, A.J., Nature 302, 49 (1983)Google Scholar
11. Wagner, C.D., Passoia, D.E., Hillery, H.F., Kinisky, T.G., Six, H.A., Jansen, W.T., Taylor, J.A., J.Vac.Sci.Technol. 21, 933 (1982)Google Scholar
12. Cahill, T.A. New Uses for Ion Accelerators Ed. Zeigler, J.F., 1975 p.1Google Scholar
13. Kellock, A.J., PhD thesis, LaTrobe University, Melbourne 3083, Australia 1987 Google Scholar
14. Madakson, P.B., Baglin, J.E.E. in Materials Modification and Growth Using Ion Beams, edited by Gibson, U.J., White, A.E., Pronko, P.P. (Mater. Res. Soc. Symp. Proc. 93, Pittsburgh, PA 1987) p.41 Google Scholar