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Photo-Assisted Resonant Tunneling Through Localized States in AlAs/GaAs Double-Barrier Structure With Undoped Spacer Layers

Published online by Cambridge University Press:  10 February 2011

H. Y. Chu ,
K. -S. Lee ,
H. -H. Park  and
E. -H. Lee
H. Y. Chu
Affiliation:
Basic Research Laboratory, Electronics and Telecommunications Research Institute, Taejon 305-600, Korea ; [email protected]
K. -S. Lee
Affiliation:
Basic Research Laboratory, Electronics and Telecommunications Research Institute, Taejon 305-600, Korea ; [email protected]
H. -H. Park
Affiliation:
Basic Research Laboratory, Electronics and Telecommunications Research Institute, Taejon 305-600, Korea ; [email protected]
E. -H. Lee
Affiliation:
Basic Research Laboratory, Electronics and Telecommunications Research Institute, Taejon 305-600, Korea ; [email protected]
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Abstract

We report on the evidence of photo-assisted resonant tunneling through localized states in AlAs/GaAs double-barrier structures (DBSs) with undoped GaAs spacers. In the photocurrent measurement, additional peaks were observed at voltages lower than that of resonance and were enhanced with the laser power. This behavior was more pronounced as the thickness of spacer layers in the DBS increased. These results are attributed to the resonant tunneling of electrons through the localized states, they are induced in the neighboring barriers, by the photoexcited carriers in spacers. We discuss the localization effect of photoexcited carriers on the resonant tunneling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 607
Copyright
Copyright © Materials Research Society 1998

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