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Photo-Assisted Mocvd Growth of High Dielectric (Ba,Sr)TiO3 Thin Films on Ni/TiN/Si Substrate for Dram Application

Published online by Cambridge University Press:  10 February 2011

Y. M. Chen ,
N. J. Wu  and
A. Ignatiew
Y. M. Chen
Affiliation:
Space Vacuum Epitaxy Center and Texas Center for Superconductivity, University of Houston, Houston, TX 77204, [email protected]
N. J. Wu
Affiliation:
Space Vacuum Epitaxy Center and Texas Center for Superconductivity, University of Houston, Houston, TX 77204, [email protected]
A. Ignatiew
Affiliation:
Space Vacuum Epitaxy Center and Texas Center for Superconductivity, University of Houston, Houston, TX 77204, [email protected]
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Abstract

High dielectric constant barium strontium titanium oxide (BST) thin films have been deposited on Ni/TiN/Si by photo-assisted metal organic chemical vapor deposition (PhAMOCVD). Planar capacitors based on the Ni/BST/Ni/TiN/Si heterostructure with BST-layer thickness of 50nm exhibited storage densities of about 30 fF/μm2 and leakage current densities of less than 10–7 A/cm2 under bias below 1.8V at room temperature. Nickel as a bottom electrode in this newly designed capacitor structure, can be easily patterned by reactive ion etching, and satisfies the requirement for integration with silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 49
Copyright
Copyright © Materials Research Society 2000

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