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Photo Modified Growth of GaAs by Chemical Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

R. Jothilingam ,
T. Farrell ,
T.B. Joyce  and
P.J. Goodhew
R. Jothilingam
Affiliation:
Department of Materials Science & Engineering, University of Liverpool, Liverpool, L69 3BX, U.K.
T. Farrell
Affiliation:
Department of Materials Science & Engineering, University of Liverpool, Liverpool, L69 3BX, U.K.
T.B. Joyce
Affiliation:
Department of Materials Science & Engineering, University of Liverpool, Liverpool, L69 3BX, U.K.
P.J. Goodhew
Affiliation:
Department of Materials Science & Engineering, University of Liverpool, Liverpool, L69 3BX, U.K.
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Abstract

We report the photo modified growth of GaAs by chemical beam epitaxy at substrate temperatures in the range 335 to 670°C using triethygallium (TEG) and arsine. A mercury-xenon lamp (electrical power 200 W) provided the irradiation for the photoassisted growth. The growth was monitored in real time by laser reflectometry (LR) using a 670 nm semiconductor laser, and the optically determined growth rate agreed with that obtained from the layer thickness measured by cross sectional transmission electron microscopy. The observed photo-enhancement of the growth rate at low substrate temperatures and inhibition at high substrate temperatures is thermal in origin, consistent with raising the substrate temperature by 10±3°C. Cross sectional transmission electron microscopy showed that the photoassisted layers are essentially free from dislocations

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 113
Copyright
Copyright © Materials Research Society 1998

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