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Photo- and Electroluminescence Study of Excitation Mechanism of Er Luminescence in a-Si:ff(Er)

Published online by Cambridge University Press:  10 February 2011

I. N. Yassievich ,
O. B. Gusev ,
M. S. Bresler ,
W. Fuhs ,
A. N. Kuznetsov ,
V. F. Masterov ,
E. I. Terukov  and
B. P. Zakharchenya
I. N. Yassievich
Affiliation:
A.F.Loffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St.Petersburg, Russia, [email protected]
O. B. Gusev
Affiliation:
A.F.Loffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St.Petersburg, Russia, [email protected]
M. S. Bresler
Affiliation:
A.F.Loffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St.Petersburg, Russia, [email protected]
W. Fuhs
Affiliation:
Hahn-Meitner Institut, Glienicker Str., Berlin, D-14109, Germany
A. N. Kuznetsov
Affiliation:
A.F.Loffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St.Petersburg, Russia, [email protected]
V. F. Masterov
Affiliation:
St.Petersburg State Technical University, Politekhnicheskaya 29, 194251 St.Petersburg, Russia
E. I. Terukov
Affiliation:
A.F.Loffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St.Petersburg, Russia, [email protected]
B. P. Zakharchenya
Affiliation:
A.F.Loffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St.Petersburg, Russia, [email protected]
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Abstract

Photo- and electroluminescence were studied in erbium-doped amorphous hydrogenated silicon films. A mechanism of excitation of erbium ions by defect-related Auger process is proposed which permits to explain consistently the whole set of our experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 325
Copyright
Copyright © Materials Research Society 1996

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References

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