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Phosphorus Gettering by Rapid Thermal Processing

Published online by Cambridge University Press:  03 September 2012

Ecuchaib Hartiti ,
Abdelilah Slaoui ,
Jean-Claude Muller  and
Paul Siffert
Ecuchaib Hartiti
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), BP 20, F-67037 Strasbourg Cedex 2, France
Abdelilah Slaoui
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), BP 20, F-67037 Strasbourg Cedex 2, France
Jean-Claude Muller
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), BP 20, F-67037 Strasbourg Cedex 2, France
Paul Siffert
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), BP 20, F-67037 Strasbourg Cedex 2, France
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Abstract

We have investigated the rapid thermal diffusion of phosphorus into p-type silicon from a spin-on coated film as a function of the process temperature and time duration. The electron diffusion length LD measurements performed by the Surface PhotoVoltage (SPV) method present evidence for a get-tering phenomena since the LD values of the diffused samples are significantly improved. This result is important for the future of RTP in the area of silicon devices where carrier transport is controlled by the bulk lifetime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 987
Copyright
Copyright © Materials Research Society 1992

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References

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