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Phosphorus Doping of Boron Carbon Alloys

Published online by Cambridge University Press:  15 February 2011

Seong-Don Hwang ,
P. A. Dowben ,
A. Cheeseman ,
J. T. Spencer  and
D. N. Mcilroy
Seong-Don Hwang
Affiliation:
Department of Physics and the Center for Materials Research and Analysis, University of Nebraska-Lincoln, Lincoln, Nebraska 68588–0111, [email protected]
P. A. Dowben
Affiliation:
Department of Physics and the Center for Materials Research and Analysis, University of Nebraska-Lincoln, Lincoln, Nebraska 68588–0111, [email protected] Department of Chemistry and the W.M. Keck Center for Molecular Electronics, Syracuse University, Syracuse, New York 13244–4100, [email protected]
A. Cheeseman
Affiliation:
Department of Chemistry and the W.M. Keck Center for Molecular Electronics, Syracuse University, Syracuse, New York 13244–4100, [email protected]
J. T. Spencer
Affiliation:
Department of Chemistry and the W.M. Keck Center for Molecular Electronics, Syracuse University, Syracuse, New York 13244–4100, [email protected]
D. N. Mcilroy
Affiliation:
Department of Physics, University of Idaho, Moscow, Idaho 83844–0903, [email protected]
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Abstract

Phosphorus doped boron carbon alloy films were made by chemical vapor deposition from a single source compound, dimeric chloro-phospha(III) carburane ((C2B10H10)2(PCl)2). Phosphorus doped B5C materials exhibit increases in the band gap from 0.9 eV to 2.6 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 1031
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1.Kumashiro, Y., Hirabayashi, M. and Takagi, S., Mater. Res. Symp. Proc. 162, 585 (1990);Google Scholar
Kumashiro, Y., Hirabayashi, M., Koshiro, T. and Okada, Y., J. Less-Common Metals, 143, 159 (1988);Google Scholar
Kumashiro, Y., J. Mater. Res. 5, 2933 (1990);Google Scholar
Kumashiro, Y., Yokohama, T., Nakamura, J., Matsuda, K., Yoshida, H. and Takahashi, J., Mater. Res. Soc. Symp. Proc. 242, 629 (1992);Google Scholar
Xia, H., Xia, Q. and Ruoff, A., J. Appl. Phys. 74, 1660 (1993).Google Scholar
2.Aselage, T., Emin, D., Samara, G., Tallant, D., Van Deusen, S., Eatough, M., Tardy, H. and Venturini, E., Phys. Rev. B48, 11759 (1993);Google Scholar
Morosin, B., MuUendore, A. W., Emin, D. and Slack, G., in Boron-Rich Solids, edited by Emin, D., Aselage, T., Beckel, C., Howard, I. and Wood, C., AIP Conf. Proc. No. 140 (AIP, New York, 1986), p. 70;Google Scholar
Werheit, H., Kuhlmann, U., Shirai, K. and Kumashiro, Y., J. Alloys Comp. 233, 121 (1996)Google Scholar
3.Li, D. and Ching, W. Y., Phys. Rev. B 52, 17073 (1995).Google Scholar
4.Dongjin, Byun, Seong-Don, Hwang, Dowben, P.A., Keith Perkins, F., Filips, F. and Ianno, N.J., Appl. Phys. Lett. 64, 1968 (1994);Google Scholar
Dongjin, Byun, Spady, B.R., Ianno, N.J., and Dowben, P.A., Nanostructured Materials 5, 465 (1995)Google Scholar
5.Hwang, Seong-Don, Yang, Ken, Dowben, P.A., Ahmad, A.A., Ianno, N.J., Li, J.Z., Lin, J.Y., Jiang, H.X. and Mcllroy, D.N., Appl. Phys. Lett. (1997), in pressGoogle Scholar
6.Seong-Don, Hwang, Remmes, N.B., Dowben, P.A., and Mcllroy, D.N., J. Vac. Sci. Technol. B14, 2957 (1996)Google Scholar
7.Seong-Don, Hwang, Dongjin, Byun, Ianno, N.J., Dowben, P.A. and Kim, H.R., Appl. Phys. Lett. 68, 1495 (1996)Google Scholar
8.Lee, S., Mazurowski, J., Ramseyer, G. and Dowben, P. A., J. Appl. Phys. 72, 4925 (1992)Google Scholar
9.Grimes, R.N., in Carboranes, edited by Maitlis, P.M., Stone, F.G. and West, R., (Academic Press, New York 1970), p. 55;Google Scholar
Roy, R. and Schroeder, H., Inorg. Chem. 2, 1107 (1963)Google Scholar
10.Tauc, J., in Optical Properties of Solids, edited by Abels, F., (American Elsevier Publishing Co. New York, 1972), p. 277.Google Scholar
11.Ahmad A., Ahmad, Ianno, N.J., Snyder, P.G., Welipitiya, D., Dongjin, Byun and Dowben, P.A., J. Appl. Phys. 79, 8643 (1996)Google Scholar
12.Golikova, O. A., Sov. Phys. Solid State 29, 1652 (1987).Google Scholar
13.Golikova, O. A., in Boron-Rich Solids, edited by Emin, D., Aselage, T., Switendick, A. C., Morosin, B. and Beckel, C., AIP Conf. Proc. No. 231 (AIP, New York, 1990), p. 108.Google Scholar
14.Aselage, T. L. and Emin, D., in Boron-Rich Solids, edited by Emin, D., Aselage, T., Switendick, A. C., Morosin, B. and Beckel, C., AIP Conf. Proc. No. 231 (AIP, New York, 1990), p. 177.Google Scholar
15.Shirai, K., Emura, S., Gonda, S. and Kumashiro, Y., J. Appl. Phys. 78, 3392 (1995).Google Scholar