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Phosphorous and Boron Incorporation and its Effect on Optical Properties of Ge:H and Si0.01Ge0.99:HFilms Deposited by LF PECVD

Published online by Cambridge University Press:  31 January 2012

Nery Delgadillo ,
Andrey Kosarev ,
Afonso Torres ,
Lancelot Garcia  and
Brian Gonzales
Nery Delgadillo
Affiliation:
University Autonomy of Tlaxcala, Faculty of Engineering and Technology, Calzada Apizaquito s/n, km. 1.5, Apizaco Taxcala, 90300, Mexico Email: [email protected]
Andrey Kosarev
Affiliation:
National Institute for Astrophysics, Optics and Electronics, L.E.Erro No.1, Col. Tonantzintla, Puebla, 72840, Mexico
Afonso Torres
Affiliation:
National Institute for Astrophysics, Optics and Electronics, L.E.Erro No.1, Col. Tonantzintla, Puebla, 72840, Mexico
Lancelot Garcia
Affiliation:
University Autonomy of Tlaxcala, Faculty of Engineering and Technology, Calzada Apizaquito s/n, km. 1.5, Apizaco Taxcala, 90300, Mexico Email: [email protected]
Brian Gonzales
Affiliation:
University Autonomy of Tlaxcala, Faculty of Engineering and Technology, Calzada Apizaquito s/n, km. 1.5, Apizaco Taxcala, 90300, Mexico Email: [email protected]
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Abstract

Deposition conditions that provided low absorption related to both band tail and deep localized states have been found for both materials Ge:H and Si1YGeY:H. Phosphorous incorporation on Si0.01Ge0.99:H films and boron incorporation on Ge:H films were deposited by low frequency plasma-enhanced chemical vapour deposition (LF PECVD). The phosphorous incorporation in solidphase was observed to preferential with the increase of the doping in the gas phase to 2.5 %, and 2.5% to 4% was observed preferential Si0.01Ge0.99 film, boron incorporation in solid phase increase linearly with the increase of the doping gas phase. The content of solid phase was characterized by Secondary ion mass spectrometry (SIMS) profiling. Hydrogen concentration in the films was determined from Fourier transform infrared spectroscopy (FTIR) and SIMS measurements. Optical measurements provided optical gap, localized states, and band tail. A significant reduction of both band tail and deep localized states were observed at boron incorporation in solid phase = 0.004% on Ge:H films and the same were observed at phosphorous incorporation in solid phase = 0.29% on Si0.01Ge0.99:H films.

Keywords

amorphousfilmGeplasma-enhanced CVD (PECVD)optical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1372: Symposium S3 – Structural and Chemical Characterization of Metal Alloys and Compounds—2011 , 2012 , imrc-1372-s3-p43
Copyright
Copyright © Materials Research Society 2012

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References

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