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Pholuminuksence Studies on Porous Silioon Quantum Confinement Mechanism

Published online by Cambridge University Press:  25 February 2011

Shulin Zhang ,
Kuoksan He ,
Yangtian Hou ,
Xin Wang ,
Jingjian Li ,
Peng Diao ,
Bidong Qian ,
Shengmin Cai  and
Akira Fujishijma
Shulin Zhang
Affiliation:
Dept of Physics, Peking University, Beijing 100871, China
Kuoksan He
Affiliation:
Dept of Physics, Peking University, Beijing 100871, China
Yangtian Hou
Affiliation:
Dept of Physics, Peking University, Beijing 100871, China
Xin Wang
Affiliation:
Dept of Physics, Peking University, Beijing 100871, China
Jingjian Li
Affiliation:
Dept. of Chemistry, Peking University, Beijing 100871, China
Peng Diao
Affiliation:
Dept. of Chemistry, Peking University, Beijing 100871, China
Bidong Qian
Affiliation:
Dept. of Chemistry, Peking University, Beijing 100871, China
Shengmin Cai
Affiliation:
Dept. of Chemistry, Peking University, Beijing 100871, China
Akira Fujishijma
Affiliation:
Dept. of Synthetic Chemistry, University of Tokyo, Japan
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Abstract

A novel step—like and pinning behavior of photoluminescence peak energy connected with changes in the concentration of HIF and current density were for the first time observed for p— type porous silicon. Based on a theoretical calculation of the electron structure of the silicon quantum wire it is argued that these behaviors can be explained in terms of a novel formation mechanism model of porous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 123
Copyright
Copyright © Materials Research Society 1993

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References

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