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Phase Transformation of Germanium Ultrafine Particles at High Temperature

Published online by Cambridge University Press:  15 February 2011

S. Nozaki ,
S. Sato ,
H. Ono ,
H. Morisaki  and
M. Iwase
S. Nozaki
Affiliation:
Department of Communications and Systems, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182, Japan
S. Sato
Affiliation:
Department of Communications and Systems, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182, Japan
H. Ono
Affiliation:
Department of Communications and Systems, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182, Japan
H. Morisaki
Affiliation:
Department of Communications and Systems, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182, Japan
M. Iwase
Affiliation:
Department of Electrical Engineering, Tokai University, 1117 Kitakaname, Hiratsuka-shi, Kanagawa 259-12, Japan
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Abstract

Germanium (Ge) films were deposited on substrates whose temperature was kept at room (Ge-RT) or liquid nitrogen temperature (Ge-LNT) by the cluster-beam evaporation technique. The Raman spectra of both films with a double peak suggest that the crystal structure is not the ordinary diamond but the tetragonal one. The critical temperature for the phase transformation from the tetragonal into the diamond structure is found much higher than that for the Ge nanostructures deposited by the gas-evaporation technique. The Ge-LNT sample exhibits photooxidation and photoluminescence (PL) when it is exposed to the UV light. Their PL and optical absorption characteristics are strongly influenced by a combination of the photo-oxidation and thermal annealing treatments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 223
Copyright
Copyright © Materials Research Society 1996

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References

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