Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-20T09:21:33.918Z Has data issue: false hasContentIssue false
  • English
  • Français

Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD

Published online by Cambridge University Press:  10 February 2011

A. Banerjee  and
G. Lucovsky
A. Banerjee
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
G. Lucovsky
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
Get access

Abstract

Hydrogenated silicon suboxide and subnitride films were deposited by a remote plasma enhanced chemical-vapor deposition (RPECVD) process. Rapid thermal annealing (RTA) of these alloys eliminated all of the bonded hydrogen and formed a two phase system. The microstructure of the annealed films showed silicon crystallites (c-Si) surrounded by amorphous layers. The amorphous layers were identified as SiO2 and Si3N4 in the annealed suboxides and subnitrides, respectively. The as-deposited films showed band edge photoluminescence (PL); however, no PL was observed from the annealed films. This indicates that there was no significant suboxide or subnitride bonding in the amorphous layers at the metallurgically-sharp c-Si-SiO2 and c-Si-Si3N4 interfaces, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 405
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Fountain, G. G., Rudder, R. A., Hattangady, S. V., Markunas, R. J. and Lindorme, P. S., J. Appl. Phys., 63, 4744 (1988); D. R. Lee, Ph. D. Thesis, North Carolina State University (1995).Google Scholar
2. Hattangady, S. V., Ph.D. thesis, North Carolina State University (1995).Google Scholar
3. Banerjee, A. and Lucovsky, G., Mat. Res. Soc. Symp. Proc., 406 (1995).Google Scholar
4. Knights, J. C., Street, R. A. and Lucovsky, G., J. of Non-Crystalline Solids, 35&36, 279 (1980).Google Scholar
5. Milewski, P. D., Lichtenwalner, D. J., Mehta, P., Kingon, A. I., Zhang, D. and Kolbas, R. M., J. of Electronic Materials, 23, (1994).Google Scholar
6. Augustine, B. H., Irene, E. A., He, Y. J., Price, K. J., McNeil, L. E., Christensen, K. N. and Maher, D. M., J. Appl. Phys., 78, 4020 (1995).Google Scholar
7. Koch, F., Microelectronic Engineering, 28, 237 (1995).Google Scholar
8. Shimizu-Iwayama, T., Nakao, S., Saitoh, K. and Itoh, N., J. Phys: Condens. Matter, 6, L601 (1994).Google Scholar