Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-19T03:07:03.336Z Has data issue: false hasContentIssue false

Phase Equilibria at Internal Interfaces of Icosahedral Al–Mn–Pd

Published online by Cambridge University Press:  17 March 2011

Reinhard Lück
Affiliation:
Max-Planck-Institut für Metallforschung, Seestraße 92, D-70174 Stuttgart, Germany
Tilo Gödecke
Affiliation:
Max-Planck-Institut für Metallforschung, Seestraße 92, D-70174 Stuttgart, Germany
Conradin Beeli
Affiliation:
Solid State Physics Laboratory, ETH Zürich, CH-8093 Zürich, Switzerland
Get access

Abstract

Highly faceted microholes (voids) in icosahedral Al-Mn-Pd quasicrystals form during annealing at temperatures between 750 and 830°C via classical Ostwald ripening. The specimens were single-phase icosahedral with a composition of Al71Mn9Pd20. If such a specimen containing voids is cooled to room temperature with a constant cooling rate of typically 0.6 to 5 K/min, the facets of the voids are frequently found to be decorated by a different material. The decorations have typically a morphology similar to fractals. Specimens rapidly quenched after isothermal heat treatments around 830°C never showed similar decorations. By X-ray microanalysis in a scanning electron microscope it has been found that this decoration material is considerably poorer in Al-content that the icosahedral phase, namely: Al60Mn10Pd30. Accordingly, these decorations are precipitations at the surfaces of voids inside a single-phase icosahedral matrix. This implies that these decorations are formed at the void surfaces bya diffusion induced local equilibrium. The local equilibrium can be understood on the basis of the equilbrium results in a single icosahedral phase.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Godecke, T., Lück, R., Metallkd, Z.. 86 109121 (1995).Google Scholar
2. Godecke, T., Lück, R., Beeli, C., Proc. 5th Int. Conf. on Quasicrystals, Avignon, 1995, Eds. Janot, Chr., Dubois, J.-M., World Scientific, Singapore; 1955, pp.644-647.Google Scholar
3. Ishimasa, T., Proc. 5th Int. Conf. on Quasicrystals, Avignon, 1995, Eds. C. Janot, Mosseri, R., World Scientific, Singapore; 1955, pp.684-651.Google Scholar
4. Grushko, B., Yurechko, M., Tamura, N., J. Alloys and Comp. 290, 164171 (1999).Google Scholar
5. Beeli, C., Gödecke, T., Lück, R., Phil. Mag. Lett. 78, 339348 (1998).Google Scholar
6. Beeli, C., Gödecke, T., Lück, R., Tokyo, 1997. Eds. Takeuchi, S. and Fujiwara, T., World Scientific, Singapore; 1998, pp. 241424.Google Scholar
7. Böröczky, K. Jr, Schnell, U., Discrete and Computational Geometry 21, 421436 (1999).Google Scholar
8. Böröczky, K. Jr, Schnell, U., Wills, J.M., Directions in Mathematical Quasicrystals, Eds. Baake, M., Moody, R.V., CRM Monograph Series, AMS Providence (RI), 2000, pp. 255272.Google Scholar
9. Coddens, G., Lyonnard, S., Hennion, B., Calvarays, Y., Phys. Rev. B 62, 62686295 (2000).Google Scholar
10. Dubois, J.-M., Proc 6th Int. Conf. on Quasicrystals, Tokoyo, 1997, Eds. Takeuchi, S. and Fujiwara, T., WorldScientific, Singapore; 1998, pp.785-791.Google Scholar
11. Mehrer, H., Zuzmkley, Th., Eggersmann, M., Galler, R., Salamon, M., Met. Res. Soc. Symp. 527, 1998, pp. 321.Google Scholar
12. Blüher, R., Scharwächter, P., Frank, W., Kronmüller, H., Phys. Rev. Letters 80, 10141017 (1998).Google Scholar
13. Scheffer, M., Lück, R., Proc. Int. Conf. Aper. Crystals, Aperiodic'97, Boissieu, M. de, Verger-Gaugry, J.-L., Currat, R., World Scientific, Singapore, 1997, pp. 469472.Google Scholar
14. Beeli, C., ‘Electron Quasicrystallography’ Ph.D. thesis, ETH ZürichNo. 9801, 1992.Google Scholar
15. Beeli, C., Nissen, H.-U., Phil. Mag.B 68, 487, (1993).Google Scholar
16. Mancini, L., Reinier, E., Cloetens, P., Gastaldi, J., Härtwig, J., Schlenker, M., Baruchel, J., Phil. Mag. A 78, 1175 (1998).Google Scholar
17. Waseda, Y., Suzuki, S., Urban, K., Z. Naturforsch. 53 a, 679683 (1998).Google Scholar
18. Sutton, A.P., Baluffi, R.W., Interfaces in Crystalline Materials, Clarendon Press, Oxford 1995.Google Scholar