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A Phase Diagram Approach for Predicting Reactions in Al/TiW(-Nitride) Thin-Film Systems

Published online by Cambridge University Press:  21 February 2011

A.S. Bhansali ,
I.J.M.M. Raaijmakers ,
R. Sinclair ,
A.E. Morgan ,
B.J. Burrow  and
M. Arst
A.S. Bhansali
Affiliation:
Dept. of Materials Science & Engineering, Stanford University, Stanford, CA 94305
I.J.M.M. Raaijmakers
Affiliation:
Philips Research and Development Center, Philips Components—Signetics, Sunnyvale, CA 94088.
R. Sinclair
Affiliation:
Dept. of Materials Science & Engineering, Stanford University, Stanford, CA 94305
A.E. Morgan
Affiliation:
Philips Research and Development Center, Philips Components—Signetics, Sunnyvale, CA 94088.
B.J. Burrow
Affiliation:
Philips Research and Development Center, Philips Components—Signetics, Sunnyvale, CA 94088.
M. Arst
Affiliation:
Philips Research and Development Center, Philips Components—Signetics, Sunnyvale, CA 94088.
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Abstract

A quaternary phase diagram for Ti–W–N–Al has been calculated from existing thermodynamic data, and is used to predict the Al/TiW-nitride reaction. The predicted reaction products-TiAl3, WAl5, WAl12, and AlN—were observed by XRD and TEM in annealed Al/TiW(-nitride) thin films. The sheet resistance of Al/TiW films increased by an order of magnitude at 550°C, whereas the increase in the case of the Al/TiW-nitride films was not even two-fold. The formation of an interfacial AlN layer was observed in the Al/TiW-nitride metallization. This AlN layer limits the interaction between Al and TiW-nitride, thus providing good thermal stability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 15
Copyright
Copyright © Materials Research Society 1990

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References

1. Palmstrom, C.J., Mayer, J.W., Cunningham, B., Campbell, D.R., and Totta, P.A.. J. Appl. Phys. 58:3444, 1985.Google Scholar
2..Chang, P.-H., Liu, H.-, Keenan, J.A., Anthony, J.M., and Bohlman, J.G.. J. Appl. Phys., 62:2485, 1987.Google Scholar
3. Olowafe, J.O., Palmstrom, C.J., Colgan, E.G., and Mayer, J.W.. J. Appl. Phys., 58:3440, 1985.Google Scholar
4. Babcock, S.E. and Tu, K.N.. J. Appl. Phys., 53:6898, 1982.Google Scholar
5. Nowicki, R.S., Harris, J.M., Nicolet, M.-A., and Mitchell, I.V.. Thin Solid Films, 69:53, 1980.Google Scholar
6. Canali, C., Celotti, G., Fantini, F., and Zanoni, . Thin Solid Films,88:9, 1982.Google Scholar
7. Canali, C., Fantini, F., and Zanoni, E.. Thin Solid Films, 97:325, 1982.Google Scholar
8. Nellissen, A.J.M. and Wolters, R.A.M.. Internal Report, Philips Research Laboratories (Eindhoven, the Netherlands), 1985.Google Scholar
9. Oparowski, J.M., Sisson, R.D., and Biederman, R.R.. Thin Solid Films, 153:313, 1987.Google Scholar
10. Raaijmakers, I.J., Setalvad, T., Bhansali, A.S., Burrow, B.J., Gutai, L., and Kim, K.-B. J. Elec. Materials, August 1990.Google Scholar
11. Bhansali, A.S. and Sinclair, R.. In Materials Research Society Symposium Proceedings Vol.148, pages 71–76, 1989.Google Scholar
12. Bhansali, A.S., Sinclair, R., and Morgan, A.E.. submitted for publication.Google Scholar
13. Bhansali, A.S., Ko, D.H., and Sinclair, R.. J. Elec. Materials, August 1990.Google Scholar
14. Barin, I. and Knacke, O.. Thermochemical Properties of Inorganic Substances. Springer, Berlin, 1973 and 1977.Google Scholar