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Persistent Photocurrent in InP Nanowires Heteroepitaxially Bridged Between Single Crystal Si Surfaces

Published online by Cambridge University Press:  01 February 2011

Ataur Sarkar ,
M. Saif Islam ,
Sungsoo Yi  and
A. Alec Talin
Ataur Sarkar
Affiliation:
[email protected], University of California, Electrical and Computer Engineering, One Shields Avenue, Davis, CA, 95616, United States, 530-754-2257
M. Saif Islam
Affiliation:
[email protected], University of California, Electrical and Computer Engineering, One Shields Avenue, Davis, CA, 95616, United States
Sungsoo Yi
Affiliation:
[email protected], Currently at Advanced Laboratories, Philips Lumileds Lighting Company, Molecular Technology Laboratory, Agilent Technologies, San Jose, CA, 95131, United States
A. Alec Talin
Affiliation:
[email protected], Sandia National Laboratories, P.O. Box 969, Livermore, CA, 94551, United States
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Abstract

Room temperature photoelectrical characterization with 325-nm ultraviolet and 633-nm visible laser excitations is performed on lateral p-type InP nanowires bridged between vertically oriented heavily p-doped single crystal silicon electrodes. Experimental results under 5 V bias demonstrate persistent photoconductivity through a slow decay of excess photocurrent with relaxation times ∼110 s and ∼50 s for the UV and visible laser illuminations, respectively. Persistent photocurrent originates from the long recombination time due to carrier trapping in vacancies, defect centers, and surface states in the InP nanowires. The study opens a new understanding of trap physics of nanowire heterostructures, a critical investigation for applications of these materials in photonic devices.

Keywords

III-Vnanostructurephotoconductivity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1080: Symposium O – Semiconductor Nanowires–Growth, Physics, Devices and Applications , 2008 , 1080-O07-08
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

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