Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-27T01:40:15.966Z Has data issue: false hasContentIssue false

Performance of Polishing Slurries containing Silica Particles grown by Sol-Gel Method

Published online by Cambridge University Press:  14 March 2011

Sun Hyuk Bae
Affiliation:
Department of Chemical Engineering, Korea Advanced Institute of Science and Technology 373-1, Kusong-dong, Yusung-gu, Taejon, 305-701, Korea
Jae-Hyun So
Affiliation:
Department of Chemical Engineering, Korea Advanced Institute of Science and Technology 373-1, Kusong-dong, Yusung-gu, Taejon, 305-701, Korea
Seung-Man Yang
Affiliation:
Department of Chemical Engineering, Korea Advanced Institute of Science and Technology 373-1, Kusong-dong, Yusung-gu, Taejon, 305-701, Korea
Do Hyun Kim
Affiliation:
Department of Chemical Engineering, Korea Advanced Institute of Science and Technology 373-1, Kusong-dong, Yusung-gu, Taejon, 305-701, Korea
Get access

Abstract

Silica slurry used as abrasives in wafer polishing process is made by dispersing silica particles in an alkali solution. Since commercially available colloidal or fumed silica particles need some modifications to be directly used as abrasive slurry due to their small sizes, irregular shapes or broad size distribution, we have prepared silica abrasives by particle growth of fumed silica or colloidal silica as seeds by sol-gel method. Silica slurries prepared by this step-wise growth from commercial seeds were tested using one-armed polisher for the comparison with commercial slurries and showed the performance comparable to commercial slurries. Microstructures of polishing slurries were investigated using transmission electron microscopy and ARES rheometer. From the result, stability of the slurry was found to be more important than the primary particle sizes for the polishing performance.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Stöber, W. and Fink, A., J. Col. & Intf. Sci., 26, 62 (1968).10.1016/0021-9797(68)90272-5Google Scholar
2. Bogush, G. H., Tracy, M. A. and Zukoski, C. F., J. Non-Crystalline Solids, 104, 95 (1988).10.1016/0022-3093(88)90187-1Google Scholar
3. Coenen, S. and Kruif, C. G., J. Col. & Intf. Sci., 124, 104 (1988).10.1016/0021-9797(88)90330-XGoogle Scholar
4. So, J.-H., Oh, M-H., Lee, J.-D., and Yang, S.-M., J. Chem. Eng. Japan, Submitted (1999)Google Scholar
5. Bae, S. H., So, J.-H., Yang, S.-M., and Kim, D. H., J. Chem. Eng. Japan, Submitted (1999)Google Scholar
6. Malik, F. A., U.S. Patent No. 5, 078, 801 (1992).Google Scholar
7. Basi, J. S. and E. Mandel, U.S. Patent No. 4, 549, 374 (1985).Google Scholar
8. Ali, I. and Roy, S. R., Solid State Technol., 40, (6) 185 (1997).Google Scholar