Hostname: page-component-5cf477f64f-54txb Total loading time: 0 Render date: 2025-04-02T06:30:27.619Z Has data issue: false hasContentIssue false
  • English
  • Français

Performance and Reliability of thin Gate Dielectrics for VLSI: Materials and Processing Perspective

Published online by Cambridge University Press:  28 February 2011

R. Singh
R. Singh*
Affiliation:
School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, OK 73019
Get access

Abstract

Current trends are in the direction of submicron MOSFETs employing gate dielectrics in the thickness range of about 30 - 100A°. The performance and reliability of submicron MOSFETs can be improved by using high dielectric constant gate dielectric material. A new concept involving 2 or more dielectric material is proposed in this paper. In- situ rapid isothermal processing is proposed for the fabrication of thin gate dielectrics.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 519
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Singh, R., Proc. of the 1984 Int. Symp. on Microelectronics, published by ISHM, p.386 (1984).Google Scholar
[2] Noble, W. P. and Walker, W. W., IEEE Circuits and Device Magazine 1, 45 (1985).Google Scholar
[3] Shichijo, H., Banerjee, S.K., Malhi, S.D.S., Pollack, G.P., Richardson, W.F., Bordelon, D.M., Womack, R.H., Flany, M., Wang, C.P., Gallia, J., Davis, H.E., Shah, A.H. and Chatterjee, P.K., IEEE Electron Device Letter, EDL-7, 119 (1986).Google Scholar
[4] Singh, R., Kumar, G.G. and Taylor, K.C., Proc. of the Third Int. Symp. on VLSI, Edited by Bullis, W.M. and Broydo, S., Electrochemical Society, Proc. Vol. 85–6, p. 349 (1985).Google Scholar
[5] McBrayer, J.D., Fleetwood, D.M., Pastorek, R.A., and Jones, R.V., IEEE Trans. on Nucl. Sci. NS–32, 3935 (1985).Google Scholar
[6] Singh, R., Kumar, G.G. and Jayadev, T.S., Spring Meeting, Electrochemical Society, Extended Abstracts, Vol. 85–1, Abstract No. 253, p. 366 (1985).Google Scholar
[7] Kumar, G.G., Singh, R., Chatterjee, P.K. and Ravindran, A., Spring Meeting Electrochemical Society, Extended Abstracts, Vol. 86-1, Abstract No. 279, p. 410 (1986).Google Scholar
[8] Singh, R., Chatterjee, P.K. and Kumar, G.G., Solid State Technology, June 1986 (In Press).Google Scholar
[9] Singh, R., Taylor, K.C., Channey, G.C., Krishnamurthy, G.S.R., and Rajkanan, K., Proc. of the Second International Symposium on VLSI published by Electrochemical Soc., p. 288, 1984.Google Scholar
[10] Singh, R. and Shewchun, J., J. App. Phys. 49, 4588 (1978).Google Scholar
[11] Singh, R., and Nulman, J., Proc. of MRS Spring Meeting, 1986, Vol. 71 (In Press).Google Scholar
[12] Joshi, S.P., Singh, R. and Kahng, S.K., Recent Newspaper Symposium, “In-situ Rapid Isothermal Processing with Applications to Epitixial Thin Gate Dielectrics for VLSI”, Spring Electrochemical Society, May 1986, Abstract to be published J. Electrochem. Soc., June 1986.Google Scholar