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Performance and Reliability of thin Gate Dielectrics for VLSI: Materials and Processing Perspective

Published online by Cambridge University Press:  28 February 2011

R. Singh
R. Singh*
Affiliation:
School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, OK 73019
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Abstract

Current trends are in the direction of submicron MOSFETs employing gate dielectrics in the thickness range of about 30 - 100A°. The performance and reliability of submicron MOSFETs can be improved by using high dielectric constant gate dielectric material. A new concept involving 2 or more dielectric material is proposed in this paper. In- situ rapid isothermal processing is proposed for the fabrication of thin gate dielectrics.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 519
Copyright
Copyright © Materials Research Society 1986

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References

[1] Singh, R., Proc. of the 1984 Int. Symp. on Microelectronics, published by ISHM, p.386 (1984).Google Scholar
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