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Pendeo-Epitaxial Growth of GaN on SiC and Silicon Substrates via Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

K. J. Linthicum ,
T. Gehrke ,
D. Thomson ,
C. Ronning ,
E. P. Carlson ,
C. A. Zorman ,
M. Mehregany  and
R. F. Davis
K. J. Linthicum
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
T. Gehrke
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
D. Thomson
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
C. Ronning
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
E. P. Carlson
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
C. A. Zorman
Affiliation:
Department of Electrical, Systems and Computer Engineering and Science, Case Western Reserve University, Cleveland, OH 44106
M. Mehregany
Affiliation:
Department of Electrical, Systems and Computer Engineering and Science, Case Western Reserve University, Cleveland, OH 44106
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
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Abstract

Pendeo-epitaxial lateral growth (PE) of GaN epilayers on (0001) 6H-silicon carbide and (011) Si substrates has been achieved. Growth on the latter substrate was accomplished through the use of a 3C-SiC transition layer. The coalesced PE GaN epilayers were characterized using scanning electron diffraction, x-ray diffraction and photoluminescence spectroscopy. The regions of lateral growth exhibited ∼0.2° crystallographic tilt relative to the seed layer. The GaN seed and PE epilayers grown on the 3C-SiC/Si substrates exhibited comparable optical characteristics to the GaN seed and PE grown on 6H-SiC substrates. The near band-edge emission of the GaN/3C-SiC/Si seed was 3.450 eV (FWHM ∼ 19 meV) and the GaN/6H-SiC seed was 3.466 eV (FWHM ∼ 4 meV).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 307
Copyright
Copyright © Materials Research Society 1999

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References

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