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Peculiarity of Porous Silicon Formed in the Transition Regime

Published online by Cambridge University Press:  28 February 2011

S. Lazarouk ,
V. Chumash ,
E. Fazio ,
S. La Monica ,
G. Maiello  and
E. Proverbio
S. Lazarouk
Affiliation:
Bielorussian State University of Informatics and Electronics, P. Brovki 6, 220600 Minsk,Belarus
V. Chumash
Affiliation:
Centre of Optoelectronics, Institute of Appl. Phys. of the Acad., Chisinau 277028, Moldova
E. Fazio
Affiliation:
Rome University, Engineering Faculty, Via Eudossiana, 18,00184 Roma, Italy
S. La Monica
Affiliation:
Rome University, Engineering Faculty, Via Eudossiana, 18,00184 Roma, Italy
G. Maiello
Affiliation:
Rome University, Engineering Faculty, Via Eudossiana, 18,00184 Roma, Italy
E. Proverbio
Affiliation:
Rome University, Engineering Faculty, Via Eudossiana, 18,00184 Roma, Italy
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Abstract

Electrochemical anodization in the transition regime, between porous silicon formation region and electropolishing region, of monocrystalline silicon was investigated. Using this process bright and stable photoluminescence could be obtained on a very large range of substrate resistivities: p=12-0.005 Ωcm for p-type silicon and p = 20-0.001 Ωcm for n-type substrates.

Photoluminescence spectra, Fourier Transform IR (FTIR) absorbance and X-Ray Diffraction (XRD) measurements are reported. Investigations showed that anodic silicon suboxide was formed on the surface. The porous structure obtained in the transition regime is suggested to consist of silicon crystallites built inside an anodic oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 357
Copyright
Copyright © Materials Research Society 1995

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References

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