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Peculiarities of Zn Diffusion from Polymer Spin-on Films in AlGaAs
Published online by Cambridge University Press: 10 February 2011
Abstract
Zn diffusion into AlxGa1−xAs from polymer spin-on films has been investigated. An increase in Zn diffusivity has been observed with increase in the content of Al in A1GaAs compounds. The effect has been related to more coefficient of self-diffusion for Al than for Ga. The availability of the near-surface layer enriched with Al in epitaxial AlGaAs wafers has been found to result in poor reproducible diffusion characteristics.
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- Copyright © Materials Research Society 1998
References
2.
Boltaks, B.I., Dzhafarov, T.D., Demakov, Yu.P., Maronchuk, I.E., Sov. Phys. Semicond., 9, 545 (1975).Google Scholar
4.
Ageno, S.K., Roedel, R.J., Mellen, N., Escher, J.S., Appl. Phys. Lett., 47, 1193 (1985).Google Scholar
6.
Tachikawa, M., Mazuta, M., Kukimoto, H., Jap. J. Appl. Phys., Part 1, 23, 1594 (1984).Google Scholar
7.
Busygina, L.A., Gorelenok, A.T., Kamanin, A.V., Mokina, I.A., Shmidt, N.M., Yurre, T.A., Yakimenko, I.Yu., Patent of Russia No. 2050031 (21 June 1993).Google Scholar
8.
Kamanin, A.V., Mokina, I.A., Shmidt, N.M., Busygina, L.A., Yurre, T. A., Proc. 8th Intern. Conf. on InP and Related Compounds, Schwibisch Gmtind, Germany, p. 334–337 (1996).Google Scholar
9.
Mintairov, A.M., Smekalin, K.E., Ustinov, V.M., Khvostikov, V.P., Sov. Phys. Semicond.
26, 347 (1992).Google Scholar