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Peculiar Doping Behavior of Si:Be.

Published online by Cambridge University Press:  26 February 2011

Eugen Tarnow ,
S.B. Zhang ,
K.J. Chang  and
D.J. Chadi
Eugen Tarnow
Affiliation:
Electronic Materials Laboratory, Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
S.B. Zhang
Affiliation:
Electronic Materials Laboratory, Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
K.J. Chang
Affiliation:
Department of Physics, Korea Advanced Institute of Science & Technology, Seoul, South Korea
D.J. Chadi
Affiliation:
Electronic Materials Laboratory, Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
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Abstract

The total energies and structures of a number of Be-induced defects in Si are investigated using ab-initio local density calculations. Our primary results are: 1) The geometry of the isoelectronic center is found to correspond to a [111] substitutionalinterstitial pair (SIP); 2) The low energy defect spectrum includes large Be complexes containing at least one substitutional atom; and 3) Simple bonding rules exist for the stability of the different types of bonds in the material. Thus the Si-Be bond is found to be stable for all defect configurations while the Be-Be bond is metastable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 119
Copyright
Copyright © Materials Research Society 1991

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References

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