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PbZr0.52Ti0.48O3 Ferroelectric Thin Films on Silicon by KrF Excimer Laser Ablation

Published online by Cambridge University Press:  15 February 2011

K. Ebihara ,
F. Mitsugi ,
M. Yamazato ,
T. Ikegami  and
J. Narayan
K. Ebihara
Affiliation:
Department of Electrical and Computer Engineering, Kumamoto University, Kurokami, Kumamoto 860-8555, JAPAN, [email protected]
F. Mitsugi
Affiliation:
Department of Electrical and Computer Engineering, Kumamoto University, Kurokami, Kumamoto 860-8555, JAPAN, [email protected]
M. Yamazato
Affiliation:
Department of Electrical and Computer Engineering, Kumamoto University, Kurokami, Kumamoto 860-8555, JAPAN, [email protected]
T. Ikegami
Affiliation:
Department of Electrical and Computer Engineering, Kumamoto University, Kurokami, Kumamoto 860-8555, JAPAN, [email protected]
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7916, USA
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Abstract

The Au / PbZrxTi1-xO3 (PZT) ferroelectrics / YBa2Cu3O7-x (YBCO) superconductor / yttria-stabilized zirconia (YSZ) heterostructures were prepared on Si (100) substrate by KrF excimer laser ablation technique. The x-ray diffraction patterns showed that the PZT films prepared on YBCO / YSZ /Si at 550°C, O2 100 mTorr and a laser energy density of 2 J/cm2(5Hz) are pure perovskite and highly oriented with the (00l) orientation. The polarization (P)-electric field (E) characteristics showed the remanent polarization Pr of 23 µC/cm2 and coercive field Ec, of 35 kV/cm. Pr of the PZT capacitor degraded to one half of initial value after about 1010 switching cycles (50 kHz).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 604: Symposium LL – Materials for Smart Systems III , 1999 , 239
Copyright
Copyright © Materials Research Society 2000

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References

1 Bjormander, C., Grishin, A. M., Moon, B. M., Lee, J. and Rao, K. V., Appl. Phys. Lett. 64, 3646 (1994).10.1063/1.111191Google Scholar
2 Lin, H., Wu, N. J., Xie, K., Li, X. Y and Ignatiev, A., Appl. Phys. Lett. 65, 953 (1994).10.1063/1.112159Google Scholar
3 Liu, B. T., Hao, Z., Chen, Y F., Xu, B., Chen, H., Wu, F., Zhao, B. R., Kislinskii, Yu. and Stepantsov, E., Appl. Phys. Lett. 74, 2044 (1999).10.1063/1.123751Google Scholar
4 Senzaki, J., Mitsunaga, O., Uchida, T., Ueno, T. and Kuroiwa, K., Jpn. J. Appl. Phys. 35, 4195 (1996).10.1143/JJAP.35.4195Google Scholar
5 Sanchez, F., Varela, M., Queralt, X., Auiar, R. and Morenza, J. L., Appl. Phys. Lett. 61, 2228 (1992).10.1063/1.108276Google Scholar
6 Tokumitsu, E., Itani, K., Moon, Bum-Ki and Ishiwara, H., Jpn. J. Appl. Phys. 34, 5202 (1995).10.1143/JJAP.34.5202Google Scholar
7 Tiwari, P., Zheleva, T. and Narayan, J., Appl. Phys. Lett. 63, 30 (1993).10.1063/1.109740Google Scholar
8 Horita, S., Kawada, T. and Abe, Y, Jpn. J. Appl. Phys. 35, L1357 (1996).10.1143/JJAP.35.L1357Google Scholar
9 Pechen, E. V., Schoenberger, R., Brunner, B., Ritzinger, S., Renk, K. F., Sidorov, M. V. and Oktyabrsky, S. R., J. Appl. Phys. 74, 3614 (1993).10.1063/1.354500Google Scholar
10 Maruyama, T., Saitoh, M., Sakai, I., Hidaka, T., Yano, Y. and Noguchi, T., Appl. Phys. Lett. 73, 3524 (1998).10.1063/1.122824Google Scholar
11 Tyunina, M., Wittborn, J., Rao, K. V., Levoska, J., Leppavuori, S. and Sternberg, A., Appl. Phys. Lett. 74, 3191 (1999).10.1063/1.124103Google Scholar
12 Grishin, A. M., Yamazato, M., Yamagata, Y. and Ebihara, K., Appl. Phys. Lett. 72, 620 (1998).10.1063/1.120824Google Scholar