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Published online by Cambridge University Press: 30 December 2014
An epitaxial shell of cadmium sulphide is grown on lead sulphide quantum dots in order to reduce the concentration of surface defects. Thin solid films of these core/shell materials are found to have low carrier concentrations due to effective surface passivation which reduces the number of dangling bonds. In this paper PbS/CdS is used as a quasi-intrinsic layer in p-i-n photovoltaic devices where PbS acts as the p-layer and ZnO the n-layer. By studying different permutations of these layers and the degree of PbS p-type doping by annealing we optimise fill factor and open-circuit voltage.