Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T09:32:59.367Z Has data issue: false hasContentIssue false

Patterning of High Tc Superconductor Films with a Focussed Excimer Laser

Published online by Cambridge University Press:  25 February 2011

J.M. Hagerhorst
Affiliation:
IBM Research Division Thomas J. Watson Research Center Yorktown Heights, New York 10598
J.D. Mannhart
Affiliation:
IBM Research Division Thomas J. Watson Research Center Yorktown Heights, New York 10598
M.M. Oprysko
Affiliation:
IBM Research Division Thomas J. Watson Research Center Yorktown Heights, New York 10598
M.R. Scheuermann
Affiliation:
IBM Research Division Thomas J. Watson Research Center Yorktown Heights, New York 10598
C.C. Tsuei
Affiliation:
IBM Research Division Thomas J. Watson Research Center Yorktown Heights, New York 10598
Get access

Abstract

Laser ablation using focussed excimner light has been found to be an effective technique for the direct, maskless patterning of High Tc superconductor films. The apparatus used in the work consists of an adjustable aperture which is illuminated by a 193 nm excimer laser beam. The aperture is imaged by a microscope onto the substrate into an area as large as 200 × 200 to an area as small as 2 × 2 square microns. The superconductor films are placed on a 0.5 micron resolution, computer controlled x-y stage. Laser fluences up to 5 J/cm2 and repetition rates of 10 Hz were found to be sufficient to ablate (pattern) the High Tc films with no apparent effect on their superconducting properties as evidenced by the films′ resistance as a function of temperature (R vs T) before and after patterning.

The technique and apparatus are flexible enough to allow patterning across entire substrates and/or the definition of isolated features as small as one micron. To date, the technique has been successfully used to pattern a wide variety of films (based on material and thickness), to fabricate transmission lines several millimeters long, to pattern superconducting quantum interference devices (SQUIDs) which operate at liquid nitrogen temperatures, and to study the behavior of individual grain boundaries within films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mankiewich, P.M., Scofield, J.H., Skocpol, W.J., Howard, R.E., Dayem, A.H., and Good, E., Appl. Phys. Lett. 51, 1753 (1987)Google Scholar
2. Matsui, S., Takado, N., Tsuge, H., and Asakwa, K., Appl. Phys. Lett., 52, 69 (1988)Google Scholar
3. Yoshizako, Y., Tonouchi, M., and Kobayashi, T., Japan J. Appl. Phys. 26, 1533 (1987)Google Scholar
4. Shih, I. and Qui, C.X., Appl. Phys. Lett. 52, 1523 (1988)Google Scholar
5. Clark, G.J., Marwick, A.D., Koch, R.H., and Laibowitz, R.B., Appl. Phys. Lett. 51,139 (1987)CrossRefGoogle Scholar
6. Rothschild, M., Sedlacek, J.H.C., Black, J.G., and Ehrlich, DJ., IEEE Electron Device Lett. 9, 69 (1988)Google Scholar
7. Scheuermann, M., Chi, C.C., Tsuei, C.C., Yee, D.S., Cuomo, J.J., Laibowitz, R.B., Koch, R.H., Braren, B., Srinivasan, R., and Plechaty, M., Appl. Phys. Lett., 51 1951 (1987)CrossRefGoogle Scholar
8. Mannhart, J., Scheuermann, M., Tsuei, C.C., Oprysko, M.M., Chi, C.C., Umbach, C.P., Koch, R.H., and Miller, C., Appl. Phys. Lett., 52 1271 (1988)Google Scholar
9. Hagerhorst, J. and Oprysko, M.M. in “Excimer Beam Applications,” Vol. 998 of the Proceedings of SPIE Conf. (Boston, MA, 1988)CrossRefGoogle Scholar
10. Harte, K. adn Piwczyk, B.P. in “Excimer Beam Applications,” Vol. 998 of the Proceedings of SPIE Conf. (Boston, MA, 1988)Google Scholar
11. Scheuermann, M., Chi, C.C., Tsuei, C.C., and Mannhart, J.D., Vol. 948 of the Proceedings of SPIE Conf. (1988)Google Scholar
12. Chaudhari, P., Koch, R., Laibowitz, R.B., McGuire, T.R., and Gambino, R.J., Phys. Rev. Lett. 51, 2684 (1986)Google Scholar
13. Inam, A., Wu, X.D., Venkatesan, T., Ogale, S.B., Chang, C.C., and Dijkkamp, D., Appl. Phys. Lett. 51, 1112 (1987)Google Scholar
14. Koch, R.H., Umbach, C.P., Oprysko, M.M., Mannhart, J.D., Clark, G.J., Gupta, A., Laibowitz, R.B., Sheuermann, M.R., and Tsuei, C.C., Physica, C153–155, 1685 (1988)CrossRefGoogle Scholar
15. Mannhart, J., Chaudhari, P., Dimos, D., Tsuei, C.C. and McGuire, T., Phys. Rev. Lett. 61, 2476 (1988)Google Scholar