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Patterning of Gaas/AIGaAs Wafers by Focused Electron-Bear Induced Chlorine Etching and Subsequent Kbe Growth

Published online by Cambridge University Press:  21 February 2011

M. Taneya ,
Y. Sugimoto ,
H. Hidaka  and
K. Akita
M. Taneya
Affiliation:
Optoelectronics Technology Research Laboratory, 5-5 Tohkodai, Tsukuba, Ibaraki 300-26, Japan
Y. Sugimoto
Affiliation:
Optoelectronics Technology Research Laboratory, 5-5 Tohkodai, Tsukuba, Ibaraki 300-26, Japan
H. Hidaka
Affiliation:
Optoelectronics Technology Research Laboratory, 5-5 Tohkodai, Tsukuba, Ibaraki 300-26, Japan
K. Akita
Affiliation:
Optoelectronics Technology Research Laboratory, 5-5 Tohkodai, Tsukuba, Ibaraki 300-26, Japan
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Abstract

In-situ patterning of AlxGa1-xAs (0≦x≦0.7) using a electron-beam (EB) and chlorine gas (Cl2) and the application to “In-Situ EB Lithography” are investigated. In this patterning method, an ultra-thin GaAs oxide is utilized as a resist film. The oxide resist prevents C12 gas etching of the underlying material and can be also patterned by an EB irradiation under a C12 pressure, which brings about selective etching of GaAs/AlGaAs layers. Etch rates of AlxGa1-xAs (0<x≦0.7) are 20-30 nm/min, which is almost equal to that of GaAs (20 nm/min). Using this technique of EB-induced patterning, a novel concept “In-Situ EB Lithography” is proposed, where the whole processes for EB lithography are successively conducted in a ultra-high vacuum multi-chamber system. An overgrown layer on a GaAs surface patterned by this “In-Situ EB Lithography” shows a good morphology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 211
Copyright
Copyright © Materials Research Society 1990

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References

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