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Patterning and Reactive Ion Etching of Diamond Films using Light Coupling Masks

Published online by Cambridge University Press:  15 March 2011

Patrick W. Leech ,
Geoff K. Reeves  and
Anthony S. Holland
Patrick W. Leech
Affiliation:
CSIRO Manufacturing and Infrastructure Technology, Clayton, 3169, Victoria, Australia
Geoff K. Reeves
Affiliation:
School of Computer Systems and Electrical Engineering, RMIT University, Victoria, Australia
Anthony S. Holland
Affiliation:
School of Computer Systems and Electrical Engineering, RMIT University, Victoria, Australia
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Abstract

We describe the novel application of light coupling masks (LCM) in the lithographic patterning of fine structures in diamond films. A PDMS mask was used in the exposure of complex patterns of gratings in AZP 1205 resist on a substrate of Al/ diamond. The profiles of these grating patterns were then modified on a localized scale by a process of reflow of the resist. We report on the transfer of the patterns formed in resist by the LCMs into the diamond film using a sputtered Al layer as a mask. The two-stage process comprised etching of the pattern into the Al followed by transfer into the diamond film using CF4/ O2 and CHF3/ O2 gases. The presence of O2 in the CF4/ O2 and CHF3/ O2 gas mixtures produced Al oxides on the surface of the mask. The etch selectivity of the mask was greater in CF4/ O2 than in CHF3/ O2 gases and was only weakly dependent on the concentration of O2 (0-12 sccm).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 820: Symposia O/R – Nanoengineered Assemblies and Advanced Micro/Nanosystems , 2004 , R5.2
Copyright
Copyright © Materials Research Society 2004

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