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Patterned Crystal Growth of GaAs by Laser Assisted Atomic Layer Epitaxy
Published online by Cambridge University Press: 25 February 2011
Abstract
Atomic layer epitaxy (ALE) of GaAs is achieved by metalorganic vapor phase epitaxy (MOVPE) under irradiation by Ar ion laser. The self-limiting mechanism for gallium deposition at one atomic layer on an arsenic atomic surface is realized by the site-selective decomposition of triethylgallium on the arsenic surface. A patterned growth of ALE is obtained by scanning a laser beam on a substrate.
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- Copyright © Materials Research Society 1989
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