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Passive devices for determining fracture strength of MEMS structural materials

Published online by Cambridge University Press:  01 February 2011

H Kahn ,
R Ballarini  and
A H Heuer
H Kahn
Affiliation:
[email protected], Case Western Reserve University, Materials Science and Engineering, 10900 Euclid Ave, Cleveland, OH, 44106-7204, United States
R Ballarini
Affiliation:
[email protected], University of Minnesota, Civil Engineering, Minneapolis, MN, 55455, United States
A H Heuer
Affiliation:
[email protected], Case Western Reserve University, Materials Science and Engineering, Cleveland, OH, 44106-7204, United States
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Abstract

In microelectromechanical systems (MEMS) device design and fabrication there exists a need for quick determination of fracture strength. This report describes several passive devices that use the residual stresses contained within structural MEMS materials to determine fracture strength. Stress concentrations of varying degrees are generated at micromachined notch roots, and the critical stress required for failure indicates the fracture strength. A variety of devices have been fabricated from materials, such as polysilicon, silicon nitride, and aluminum, with widely varying residual stresses, including both tensile and compressive.

Keywords

microelectro-mechanical (MEMS)strengthstress/strain relationship
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1052: Symposium DD – Microelectromechanical Systems–Materials and Devices , 2007 , 1052-DD02-02
Copyright
Copyright © Materials Research Society 2008

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References

1 Biebl, M., Philipsborn, H. von, “Fracture strength of doped and undoped polysilicon” Proc. Intl. Conf. On Solid-State Sensors and Actuators, Transducers 95, 72–75 (1995).Google Scholar
2 Fan, L.S, Howe, R.T, and Muller, R.S, “Fracture toughness characterization of brittle films,” Sensors and Actuators A, 21–23, 872–874 (1990).Google Scholar
3 Kahn, H., Ballarini, R., Bellante, J.J, and Heuer, A.H, “Fatigue failure in polysilicon not due to simple stress corrosion cracking,” Science, 298, 1215–1218 (2002).Google Scholar
4 Kahn, H., Jing, N., Huh, M., and Heuer, A.H, “Growth stresses and viscosity of thermal oxides on silicon and polysilicon,” Journal of Materials Research, 21, 209–214 (2006).Google Scholar
5 Durelli, A.J, Morse, S., and Parks, V., “The Theta specimen for determining tensile strength of brittle materials,” Materials Research and Standards, 2, 114–117 (1962).Google Scholar
6 Yang, J., Kahn, H., Phillips, S.M, and Heuer, A.H, “A new technique for producing large-area as-deposited zero-stress LPCVD polysilicon films: the MultiPoly process,” J. Microelectromech. Syst. 9, 485–494 (2000).Google Scholar