Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-28T08:52:31.474Z Has data issue: false hasContentIssue false
  • English
  • Français

Passivation of Zn-Acceptors in InGaAs During Rie with CHF3/H2 and CH4/H2

Published online by Cambridge University Press:  25 February 2011

Martin Möhrle
Martin Möhrle*
Affiliation:
Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH, Einsteinufer 37, D-1000 Berlin, Federal Republic of Germany
Get access

Abstract

Reactive ion etching of highly Zn-doped InGaAs with hydrogen-containing gases such as CHF3/H2, CH4/H2 and CH4/He leads to a drastical reduction of the concentration of electrically active acceptors in a near-surface layer. Ti/Pt/Au contacts applied on as-treated p++-InGaAs layers show non-ohmic I/V-characteristics due to this passivation effect. Annealing at moderate temperatures (330°C, 20 minutes) was found to restore full electrical activity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 495
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Johnson, N.M., Burnham, R.D., Street, R.A., Thornton, R.L., Phys. Rev. B 33, 1102 (1986)Google Scholar
2 Dautremont-Smith, W.C., Lopata, J., Pearton, S.J., Koszi, L.A., Stavola, M., J. Appl. Phys. 66, 1993 (1989)Google Scholar
3 Hayes, T.R., Dautremont-Smith, W.C., Luftman, H.S., Lee, J.W., Appl. Phys. Lett. 55, 56 (1989)Google Scholar
4 Niggebrügge, U., Klug, M., Garus, G., Inst. Phys. Conf. Ser. 79, 367 (1986)Google Scholar
5 Kaumanns, R., Grote, N., Bach, H.G., Fidorra, F., Inst. Phys. Conf. Ser. 91, 501 (1988)Google Scholar