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Passivation of Semiconductor Surfaces for Improved Radiation Detectors: X-Ray Photoemission Analysis

Published online by Cambridge University Press:  01 February 2011

Art J Nelson
Affiliation:
[email protected], LLNL, MSTD, 7000 East Avenue, Livermore, CA, 94550, United States, 925-422-6488, 925-422-6892
A M Conway
Affiliation:
[email protected], LLNL, ENG, 7000 East Avenue, Livermore, CA, 94550, United States
C E Reinhardt
Affiliation:
[email protected], LLNL, ENG, 7000 East Avenue, Livermore, CA, 94550, United States
J L Ferreira
Affiliation:
[email protected], LLNL, MSTD, 7000 East Avenue, Livermore, CA, 94550, United States
R J Nikolic
Affiliation:
[email protected], LLNL, ENG, 7000 East Avenue, Livermore, CA, 94550, United States
S A Payne
Affiliation:
[email protected], LLNL, MSTD, 7000 East Avenue, Livermore, CA, 94550, United States
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Abstract

Surface passivation of device-grade radiation detector materials was investigated using x-ray photoelectron spectroscopy in combination with transport property measurements before and after various chemical treatments. Specifically Br-MeOH (2% Br), KOH with NH4F/H2O2 and NH4OH solutions were used to etch, reduce and oxidize the surface of Cd(1-x)ZnxTe semiconductor crystals. Scanning electron microscopy was used to evaluate the resultant microscopic surface morphology. Angle-resolved high-resolution photoemission measurements on the valence band electronic structure and core lines were used to evaluate the surface chemistry of the chemically treated surfaces. Metal overlayers were then deposited on these chemically treated surfaces and the I-V characteristics measured. The measurements were correlated to understand the effect of interface chemistry on the electronic structure at these interfaces with the goal of optimizing the Schottky barrier height for improved radiation detector devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

1. Schlesinger, T.E., Toney, J.E., Yoon, H., Lee, E.Y., Brunett, B.A., Franks, L., and James, R.B., Materials Sci. Eng. 32, 103 (2001).Google Scholar
2. Takahashi, T. and Watanabe, S., IEEE Trans. Nucl. Sci. 48(4), 950 (2001).Google Scholar
3. Chen, K.-T., Shi, D. T., Chen, H., Granderson, B., George, M. A., Collins, W. E., and Burger, A., J. Vac. Sci. Technol. A15(3), 850 (1997).Google Scholar
4. Wenbin, S., Kunshu, W., Jiahua, M., Jianyong, T., Qi, Z. and Yongbiao, Q., Semicond. Sci. Technol. 20, 343 (2005).Google Scholar
5. Ivanitska, V. G., Moravec, P., Franc, J., Tomashik, Z. F., Feychuk, P. I., Tomashik, V. M., Shcherbak, L. P., Masek, K., and Hoschl, P., J. Electron. Mater. 36(8), 1021 (2007).Google Scholar
6. Qiang, L. and Wanqi, J., Surface states and passivation of p-Cd0.9Zn0.1Te crystal, Nucl. Instrum. Methods A 562(1), 468 (2006).Google Scholar
7. John, P., Miller, T., Hsieh, T.C., Shapiro, A.P., Wachs, A.L., and Chiang, T.-C., Phys. Rev. B34, 6704 (1986).Google Scholar