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Passivation of GaAs Laser Mirrors by Ion-Beam Deposited Al2O3

Published online by Cambridge University Press:  25 February 2011

D. J. Webb ,
H. -P. Dietrich ,
F. Gfeller ,
A. Moser  and
P. Vettiger
D. J. Webb
Affiliation:
IBM Research Division, Zurich Research Laboratory, 8803 Rüischlikon, Switzerland
H. -P. Dietrich
Affiliation:
IBM Research Division, Zurich Research Laboratory, 8803 Rüischlikon, Switzerland
F. Gfeller
Affiliation:
IBM Research Division, Zurich Research Laboratory, 8803 Rüischlikon, Switzerland
A. Moser
Affiliation:
IBM Research Division, Zurich Research Laboratory, 8803 Rüischlikon, Switzerland
P. Vettiger
Affiliation:
IBM Research Division, Zurich Research Laboratory, 8803 Rüischlikon, Switzerland
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Abstract

The use of ion-beam sputtered Al2O3 to passivate the mirrors of semiconductor injection lasers is described. Dense films, which offer considerable protection against corrosion, can be deposited without damage to the crystal surface. The overall quality of the passivation is demonstrated by long-term stress testing of the lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 507
Copyright
Copyright © Materials Research Society 1989

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References

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