Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T17:45:11.022Z Has data issue: false hasContentIssue false
  • English
  • Français

Passivation of Carbon Doping in InGaAs During ECR-CVD of SiNx

Published online by Cambridge University Press:  10 February 2011

F. Ren ,
R. A. Hamm ,
R. G. Wilson ,
S. J. Pearton  and
J. R. Lothian
F. Ren
Affiliation:
Lucent Technologies, Bell Laboratories, Murray Hill, NJ 07974, USA
R. A. Hamm
Affiliation:
Lucent Technologies, Bell Laboratories, Murray Hill, NJ 07974, USA
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265, USA
S. J. Pearton
Affiliation:
University of Florida, Gainesville, FL 32611, USA
J. R. Lothian
Affiliation:
Lucent Technologies, Bell Laboratories, Murray Hill, NJ 07974, USA
Get access

Abstract

InGaAs (C) grown by gas-source MBE is found to contain significant concentrations 5 × 1018 cm−3 of hydrogen that is incorporated from the source gases. Subsequent deposition of ECR-CVD SiNx films as surface encapsulation produces additional hydrogen incorporation from the SiD4/N2 precursors, but actually reactivates C acceptors that were passivated in the asgrown InGaAs. Further thermal treatments produce substantial hydrogen in-diffusion from the SiNx film into the InGaAs, causing changes in sheet resistance and contact resistance. These processes simulate several steps in the formation of the base mesa of an InGaAs-based heterojunction bipolar transistor, and show how subtle changes in the temperature of these processes can affect subsequently device performance and apparent reliability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 321
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. See for example, InP HBTs: Growth, Processing and Applications, ed. Jalali, B. and Pearton, S. J. (Artech House, Norwood, MA 1995).Google Scholar
2. Ren, F., Abernathy, C. R., Chu, S. N. G., Lothian, J. R. and Pearton, S. J., “The Role of hydrogen in current-induced degradation of carbon-doped GaAs/AlGaAs HBTs”, Solid State Electron 1995, Vol.38 pp. 1137–1141.Google Scholar
3. Pearton, S. J., Abernathy, C. R., Lee, J. W., Ren, F. and Wu, C. S. “Comparison of HW and He+ implant isolation of GaAs-based HBTs, J. Vac. Sci. Technol. B 1995, Vol.13 pp. 15–18.Google Scholar
4. Hanson, A. W., Stockman, S. A. and Stillman, G. E. “InP/InGaAs HBTs with a C-doped based grown by MOCVD”, IEEE Electron. Dev. Lett. 1992, Vol.13, pp. 504–506.Google Scholar
5. Song, J. I., Hong, B. W. P., Palmstrom, C. J., Van\der Gaag, B. P. and Chough, K. B., “Ultra-high speed InP/InGaAs HBTs”, IEEE Electron. Dev. Lett. 1994 Vol.15, pp. 94–96.Google Scholar
6. Gee, R. C. Chin, T. D., Tu, C. W., Asbeck, P. M., Lin, C. L., Kirchner, P. D. and Woodall, J. M., “InP/InGaAs HBTs grown by gas-source MBE with C-doped base”, IEEE Electron Dev. Lett. 1992 Vol.13 pp. 247–249.Google Scholar
7. Pearton, S. J., Corbett, J. W. and Stavola, M., “Hydrogen in Crystalline Semiconductors”, (Springer, Heidelberg 1992).Google Scholar