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Passivation and Annealing for Improved Stability of High Performance IGZO TFTs

Published online by Cambridge University Press:  14 October 2014

T. Mudgal ,
N. Walsh ,
R.G. Manley  and
K.D. Hirschman
T. Mudgal
Affiliation:
Electrical & Microelectronic Engineering Department Rochester Institute of Technology, Rochester, New York, 14623, USA
N. Walsh
Affiliation:
Electrical & Microelectronic Engineering Department Rochester Institute of Technology, Rochester, New York, 14623, USA
R.G. Manley
Affiliation:
Corning Incorporated, Science and Technology, Corning, New York, 14870, USA
K.D. Hirschman
Affiliation:
Electrical & Microelectronic Engineering Department Rochester Institute of Technology, Rochester, New York, 14623, USA
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Abstract

The influence of annealing ambient conditions and deposited passivation materials on indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT) performance is investigated. Results from annealing experiments confirm that a nominal exposure to oxidizing ambient conditions is required, which is a function of temperature, time and gas environment. Nitrogen anneal with a controlled air ramp-down provided the best performance devices with a mobility (µsat) of 11-13 cm2/V·s and subthreshold slope (SS) of 135-200 mV/dec, with some hysteresis. Plasma-deposited passivation materials including sputtered quartz and PECVD SiO2 demonstrated a significant increase in material conductivity, which was not significantly reversible by an oxidizing ambient anneal. E-beam evaporated Al2O3 passivated devices that were annealed in air at 400 °C demonstrated improved stability over time and suppressed hysteresis in comparison to unpassivated devices. Devices which were passivated with B-staged bisbenzocyclobutene-based (BCB) resins and annealed in air at 250 °C also exhibited suppressed hysteresis.

Keywords

oxidethin filmpassivation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1692: Symposium CC – New Materials and Processes for Interconnects, Novel Memory and Advanced Display Technologies , 2014 , mrss14-1692-cc12-02
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Hayashi, R., Ofuji, M., Kaji, N., Takahashi, K., Abe, K., Yabuta, H., Sano, M., Kumomi, H., Nomura, K., Kamiya, T., Hirano, M. and Hosono, H., J. Soc. Inf. Disp., 15, 915 (2007).CrossRefGoogle Scholar
Kamiya, T., Nomura, K. and Hosono, H., J. Disp. Technol., 5, 273 (2009).CrossRefGoogle Scholar
Nomura, K., Kamiya, T., Hirano, M. and Hosono, H., Appl. Phys. Lett., 95, 013502 (2009).CrossRefGoogle Scholar
Hoshino, K., Bao, Y. and Wager, J., J. Soc. Inf. Disp., 21, 310 (2013).CrossRefGoogle Scholar
Ryu, S. O., Journal of Nanoelectronics and Optoelectronics, 6, 283 (2011).CrossRefGoogle Scholar
Mudgal, T., Walsh, N., Manley, R. G. and Hirschman, K. D., ECS Journal of Solid State Science and Technology, 3, Q3032 (2014).CrossRefGoogle Scholar
Park, J.-S., Jeong, J. K., Mo, Y.-G., Kim, H. D. and Kim, S.-I., Applied Physics Letters, 90, 262106 (2007).CrossRefGoogle Scholar