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A Particular Photo-CVD Apparatus for Hydrogenated Amorphous Silicon Deposition

Published online by Cambridge University Press:  21 February 2011

C. Manfredotti ,
F. Fizzotti ,
C. Osenga ,
M. Boero ,
V. Rigato  and
A. Quaranta
C. Manfredotti
Affiliation:
Experimental Physics Dept., University of Torino, Via Giuria 1 – 10125 Torino (Italy)
F. Fizzotti
Affiliation:
Experimental Physics Dept., University of Torino, Via Giuria 1 – 10125 Torino (Italy)
C. Osenga
Affiliation:
Experimental Physics Dept., University of Torino, Via Giuria 1 – 10125 Torino (Italy)
M. Boero
Affiliation:
Experimental Physics Dept., University of Torino, Via Giuria 1 – 10125 Torino (Italy)
V. Rigato
Affiliation:
Physics Dept., University of Padova, Via Marzuolo 8 - Padova (Italy)
A. Quaranta
Affiliation:
Physics Dept., University of Padova, Via Marzuolo 8 - Padova (Italy)
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Abstract

A new PHOTO-CVD apparatus has been built in order to deposit a – Si : H films and other kinds of amorphous thin films by a technique which is both simple and versatile. This apparatus is composed of three chambers connected together: a load-lock chamber, a process chamber and a third chamber for in-situ analysis of deposited films. A peculiarity of the lamp, a dielectric discharge lamp which can work with noble gases like Xe or Kr, is that it can be completely dismounted without breaking the vacuum in order to clean the optical MgF2 window. By this method, the deposition chamber can be kept in very clean conditions. In this apparatus, we started to deposit a – SixC1−x: H of very good quality, taking their thickness into account. These films have been completely characterized by chemical (RBS, ERDA) and optical (PDS) methods. Their quality can be compared with quality of a – Si : H samples of the same thickness obtained by PECVD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 165
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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