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Particle Removal from Semiconductor Surfaces Using a Photon-Assisted, Gas-Phase Cleaning Process

Published online by Cambridge University Press:  21 February 2011

Audrey C. Engelsberg
Audrey C. Engelsberg*
Affiliation:
Radiance Services Company, 4405 East West Highway, Bethesda, MD 20814
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Abstract

Control and elimination of contamination in semiconductor manufacturing (tools and wafers) will be an enabling technology for the manufacture of devices with groundrules < 0.5 μm. The current trend in semiconductor manufacturing is towards mini-environments and cluster tools integrating several processing steps including cleaning. Relevant contaminants are now sufficiently small that wet chemical cleaning processes are unable to wet them sufficiently to effect removal by mechanical means. Wet processes are also difficult to integrate into cluster tools. In this paper, we describe a new non-reactive, “dry”, gas-phase cleaning and surface modification process. This technology utilizes photons from a high energy irradiation source in conjunction with a flowing gas to break the bonds holding contaminants to the surface and carry the freed contaminants away from the surface. Removal rates of contaminants depend on the wavelength of the irradiation source, energy flux and flow rate of the gas, not a knowledge of the chemical properties of the contaminants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 255
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. deLarios, J., Krusell, W., McKean, D., Smolinsky, G., Bhat, S., Doris, B., and Gordon, M. in Proceedings: Microcontamination 92. (Santa Clara, CA, 1991) p. 706.Google Scholar
2. “Ultraclean methods are keys to success”, Microcontamination, Jan., 1993, p.14.Google Scholar
3. McDermontt, W.T., Ockovic, R.C., Wu, J.J., and Miller, R.J., Microcontamination, October, 1991, p. 33.Google Scholar
4. Bok, E., Sol. State. Technol., June 1992, p.117.Google Scholar
5. Allen, S., Appl. Phys. Lett, 58, 203 (1991).Google Scholar
6. Zapka, W., Zemlich, W., and Tam, A.C., Appl. Phys. Lett., 58, 2217 (1991).Google Scholar
7. Engelsberg, A. C., Ph.D. thesis, Rensselaer Polytechnic Institute, 1988.Google Scholar
8. Engelsberg, A.C., U.S. Patents Nos. 5,024,968 and 5,099,447 and patents issued or pending in the following jurisdictions: United States, Canada, Taiwan, Australia, France, Germany, Italy, Finland, Sweden, Belgium, Austria, Switzerland, Liechtenstein, Luxembourg, The Netherlands, Spain, Greece, Ireland, Brazil, Mexico, Denmark, Norway, former U.S.S.R. including Russia and Ukraine, the United Kingdom, Hong Kong, Singapore, China, Japan, and Korea.Google Scholar
9. Dulcey, C. S., Georger, J.H. Jr., Krauthamer, V., Stenger, D.A., Fare, T.L., and Calvert, J.F., Science, 26 April 1991, p.552.Google Scholar
10. Shen, Y. R., Principles of Nonlinear Optics, (John Wiley and Sons, New York, 1984), chap. 1 and chap. 18.Google Scholar
11. Lam, K-S. and George, T.F., Phys. Rev. A. 33, 2491 (1986).Google Scholar
12. Lin, S. H., Boeglin, A. L., Fain, B., and Yeh, C., Surf. Sci. 180, 289 (1986).CrossRefGoogle Scholar
13. Fisher, W.G., in Particle Control in Semiconductor Manufacturing, edited by Donovan, R.P., (Marcel Dekker, New York, 1990), p. 424.Google Scholar