Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-27T01:45:41.445Z Has data issue: false hasContentIssue false
  • English
  • Français

Particle Production in High Density Silane Plasma

Published online by Cambridge University Press:  11 February 2011

Z. Shen ,
T. Kim ,
U. Kortshagen ,
P. H. McMurry  and
S. A. Campbell
Z. Shen
Affiliation:
Dept of Electrical and Computer Engineering, Minneapolis, MN 55455
T. Kim
Affiliation:
Dept of Mechanical Engineering University of Minnesota, Minneapolis, MN 55455
U. Kortshagen
Affiliation:
Dept of Mechanical Engineering University of Minnesota, Minneapolis, MN 55455
P. H. McMurry
Affiliation:
Dept of Mechanical Engineering University of Minnesota, Minneapolis, MN 55455
S. A. Campbell
Affiliation:
Dept of Electrical and Computer Engineering, Minneapolis, MN 55455
Get access

Abstract

To understand the mechanisms of nanoparticle formation and its potential applications, we have investigated silicon particles formed in various gasses in an inductive coupled plasma (ICP) system and have measured their structural properties by electron microscopy. Particle generation in pure SiH4 and SiH4/H2 are reported. ICP silane plasmas are shown to be an interesting and versatile source of nanoparticles. Three regimes are mapped out: a regime of no observable particle growth at the lowest pressures, a regime of polydisperse and agglomerated particles at the highest pressures, and a regime yielding highly monodisperse particles at intermediate pressures. Conditions that generate these nonagglomerated, extremely monodisperse silicon particles are emphasized. For H2 dilutions less than 92%, the growth rate is almost independent of H2 partial pressure. Particle growth decreases steadily when the H2 dilution is increased further. TEM images, however, indicate that the addition of hydrogen decreases the particle density. At higher dilution ratios, polycrystalline particles are obtained. Under all other conditions the particles are amorphous. Reasons for this behavior are explored.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F8.29
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

VI REFERENCES

1. Shen, Z. and Kortshagen, U., Journal of Vacuum Science & Technology A 20(1) pp. 153–159 (2002).Google Scholar
2. Taesung, K. Ph.D. Thesis, University of Minnesota, 2002.Google Scholar
3. Dusty Plasmas, edited by Bouchoule, A., John Wiley & Sons, Ltd, 1999.Google Scholar
4. Lee, K. W., Chen, H., and Gieseke, J. A., Aerosol Science & Technology 3(1), pp. 53–62, 1984.Google Scholar
5. Kortshagen, U., and Bhandarkar, U., Physical Review E. 60(1), pp. 887–98, July 1999.Google Scholar
6. Plasma deposition of amorphous silicon-based materials, edited by Bruno, Giovanni, Capezzuto, Pio, and Madan, Arun (1995).Google Scholar
7. Sriraman, S., Agarwal, S., Aydil, E. S., and Maroudas, D., Nature 418: pp. 62–65. (2002).Google Scholar