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Partial Transparency Effects of Silicon During Rapid Thermal Processing

Published online by Cambridge University Press:  10 February 2011

A. R. Abramson ,
H. Tadal ,
P. Nieva ,
P. Zavracky ,
I. N. Miaoulis  and
P. Y. Wong
A. R. Abramson
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Tufts University, Medford, MA, 02155
H. Tadal
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Tufts University, Medford, MA, 02155
P. Nieva
Affiliation:
Department of Electrical and Comp. Engineering, Northeastern University, Boston, MA 02115
P. Zavracky
Affiliation:
Department of Electrical and Comp. Engineering, Northeastern University, Boston, MA 02115
I. N. Miaoulis
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Tufts University, Medford, MA, 02155
P. Y. Wong
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Tufts University, Medford, MA, 02155
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Abstract

The radiative properties of a silicon wafer undergoing Rapid Thermal Processing (RTP) are contingent upon the doping level of the silicon substrate and film structure on the wafer, and fluctuate drastically with temperature and wavelength. For a lightly doped substrate, partial transparency effects must be considered that significantly affect absorption characteristics. Band gap, free carrier, and lattice absorption are the dominant absorption mechanisms and either individually or in concert have considerable effect on the overall absorption coefficient of the silicon wafer. At high doping levels, partial transparency effects dissipate, and the substrate may be considered optically thick. A numerical model has been developed to examine partial transparency effects, and to compare lightly doped (partially transparent) and heavily doped (opaque) silicon wafers with a multilayer film structure during RTP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 15
Copyright
Copyright © Materials Research Society 1998

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References

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