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Parallel Down Flow Rinsl : Water Saving Technology in Wafer Rinse

Published online by Cambridge University Press:  10 February 2011

Y. Hiratsuka  and
N. Fujikawa
Y. Hiratsuka
Affiliation:
Dan Science Co. Ltd. Ohwadacho 1‐9‐2, Hachiohji, Tokyo, 192, Japan.
N. Fujikawa
Affiliation:
Dan Science Co. Ltd. Ohwadacho 1‐9‐2, Hachiohji, Tokyo, 192, Japan.
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Abstract

We had proposed parallel downflow rinse which was capable of draining out chemical carried over to rinsing bath together with wafer about twice as fast as overflow rinse. In an attempt to further improve rinsing efficiency of PDR, we have investigated (1) the effect of wafer carrier shape, and (2) removal of boundary layer on wafer surface. Boat‐type wafer holder is preferable to conventional cassette. Three stirring techniques adequate for PDR, namely, megasonic irradiation. N2 bubbling, liquid level shifting, are found effective to remove chemical ion remaining boundary layer in measuring conductivity and resistivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 447: Symposium L – Environmental, Safety, and Health Issues in IC Pro…… , 1996 , 89
Copyright
Copyright © Materials Research Society 1997

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References

1 Wu, Y. Kuehn, T.H., and Liu, B.Y.H., in 1993 Proceedings Vol.1 (Inst. Envir. Sci. Las Vegas. Nevada) pp. 396–406.Google Scholar
2 Kempka, S.N., Torczynski, J.R., A.S. Geller, , and Rosato, J.J., Walters, R.N., Sibbett, S.S.. Micro 1995, 41.Google Scholar
3 Clews, P.J., Nelson, G.C., Matlock, C.A., Resnik, P.J., Adkins, C.L.J., and Korbe, N.C.. in Cleaning Technology in Semiconductor Device Manufacturing IV, edited by Novak, R.E., Ruzyllo, J. (The E.C.S. Proceeding Volume 95–20, 1995) pp. 66–73.Google Scholar
4 Hiratsuka, Y., Fujikawa, N., ibid., pp 74–81.Google Scholar