Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-27T01:32:19.418Z Has data issue: false hasContentIssue false
  • English
  • Français

Palladium and Aluminum Gate Metals/Aluminum Nitride/Silicon Balanced Capacitors for Selective Hydrogen Sensing

Published online by Cambridge University Press:  21 March 2011

H. E. Prakasam ,
F. Serina ,
C. Huang ,
G. W. Auner ,
L. Rimai ,
S. Ng  and
R. Naik
H. E. Prakasam
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, MI
F. Serina
Affiliation:
Department of Chemical Engineering and Material Science, Wayne State University, MI
C. Huang
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, MI
G. W. Auner
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, MI
L. Rimai
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, MI
S. Ng
Affiliation:
Department of Chemical Engineering and Material Science, Wayne State University, MI
R. Naik
Affiliation:
Department of Physics and Astronomy, Wayne State University, MI
Get access

Abstract

An alternate array of Pd/AlN/Si and Al/AlN/Si metal-insulator-semiconductor (MIS) devices has been developed using plasma source molecular beam epitaxy (PSMBE) method for deposition of AlN on Si and magnetron sputtering for deposition of Pd and Al electrodes (via mask) on AlN. Both devices show essentially identical capacitance (C) versus voltage (V) characteristics of the typical MIS capacitor. However, the C-V characteristic of a Pd-device shows a clear shift in the presence hydrogen, while that of an Al-device shows no shift. These sensors were characterized using C(V) and C(time) measurements under varying hydrogen concentration. The effects of oxygen and hydrocarbon gases on the sensors were also studied. The Pd-device responds selectively to hydrogen. These results suggest the possibility of fabricating a balanced sensor structure, which might have significant practical importance, as it would cancel all thermal and material sources of drift in the electrical component of the sensor response.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I11.27.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lundström, I., Shivaraman, S., Svensson, C. M. and Lundkvist, L. S., Appl. Phys. Lett, 26, 55 (1975).Google Scholar
2. Lundström, I., Armgarth, M., Peterson, L. G., CRC Crit. Rev. Solid State Mater. Sci, 15, 201–277 (1989).Google Scholar
3. Arbab, A., Spetz, A. and Lundström, I., Sensors and Actuators, B 15–16, 19–23 (1993)Google Scholar
4. Baranzahi, A., Spetz, A., Andersson, B. and Lundström, I., Sens. Actuators, B 26–27, 165–169 (1995)Google Scholar
5. Baranzahi, A., High temperature solid state gas sensors based on silicon carbide, Ph.D dissertation, Linkoping Studies Sci. Technol, 422 (1995)Google Scholar
6. Serina, F., Y, K.. S Ng, Huang, C., Auner, G. W., Rimai, L. and Naik, R., Appl. Phys. Lett. 79, 3350, 2001 Google Scholar
7. Samman, A., Gebremariam, S., Rimai, L., Zhang, X., Hangas, J. and Auner, G. W., J. Appl. Phys. 87, 3101 (2000)Google Scholar
8. Serina, F., Huang, C., Auner, G. W., Naik, R., Ng, S. and Rimai, L., Mat. Res. Soc. Symp. Proc. 622, p T1 3.1 (2000).Google Scholar
9. Auner, G. W., Lenane, T., Ahmad, F., Naik, R., Kuo, P. K. and Wu, Z. L., in Wide Band Gap Electronic Materials, Academic Press, 1995, p. 329.Google Scholar
10. Nocollean, E. H. and Brews, J. R., in MOS Physics and Technology, p. 176–230, Wiley, New York, 1982.Google Scholar
11. Samman, A., Gebremariam, S. and Rimai, L., Sens. Actuators B 63, 91 (2000).Google Scholar