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Pair-state formation in a nanocrystal: a theoretical perspective

Published online by Cambridge University Press:  21 March 2011

J. F. Suyver ,
R. Meester ,
A. Meijerink  and
J. J. Kelly
J. F. Suyver*
Affiliation:
Debye Institute, Physics and Chemistry of Condensed Matter, Utrecht University, P. O. Box 80.000, 3508 TA Utrecht, The Netherlands.
R. Meester
Affiliation:
Division of Mathematics and Computer Science, Free University of Amsterdam, De Boelelaan 1081a, 1081 HV Amsterdam, The Netherlands.
A. Meijerink
Affiliation:
Debye Institute, Physics and Chemistry of Condensed Matter, Utrecht University, P. O. Box 80.000, 3508 TA Utrecht, The Netherlands.
J. J. Kelly
Affiliation:
Debye Institute, Physics and Chemistry of Condensed Matter, Utrecht University, P. O. Box 80.000, 3508 TA Utrecht, The Netherlands.
*
1 Corresponding author. Tel.: +31 - 30 - 253 2214; Fax: +31 - 30 - 253 2403; E-mail: [email protected]
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Abstract

Simulations of dopant pair-state distributions are presented for zincblende nanocrystals with different radii and for different dopant fractions. The probability of finding at least one pair-state and the concentration of pair-states were calculated on the basis of a statistical average of 105 simulations per crystal size and dopant concentration. The distribution of nanocrystal lattice positions over the surface and the bulk of the crystal is computed. A mathematical description of the distributions, valid in any crystal lattice, is discussed. This removes the need for further simulations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 676: Symposium Y – Synthesis, Functional Properties and Applications of Nanostructures , 2001 , Y6.8
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

[1] Brus, L., J. Phys. Chem. 90, 2555 (1986).Google Scholar
[2] Thomas, D. G., Hopfield, J. J. and Frosch, C. J., Phys. Rev. Lett. 15, 857 (1965).Google Scholar
[3] Pankove, J. I., Optical Processes in Semiconductors (Dover Publications, New York, 1971), page 61.Google Scholar
[4] Suyver, J. F., Wuister, S. F., Kelly, J. J. and Meijerink, A., Phys. Chem. Chem. Phys. 2, 5445 (2000).Google Scholar
[5] Ferguson, J., Guggenheim, H. J. and Tanabe, Y., J. Phys. Soc. Jpn. 21, 692 (1966).Google Scholar
[6] Ronda, C. R. and Amrein, T., J. Lumin. 69, 245 (1996).Google Scholar
[7] Maksimov, A. A., Bacher, G., et al., Phys. Rev. B 62, R7767 (2000).Google Scholar
[8] Behringer, R. E., J. Chem. Phys. 29, 537 (1958).Google Scholar
[9] Suyver, J. F., Meester, R., Kelly, J. J. and Meijerink, A., Submitted to Phys. Rev. B, (2001).Google Scholar
[10] Barbour, A. D., Holst, L. and Janson, S., Poisson Approximation (Clarendon Press, Oxford, 1992), chapter 2.Google Scholar
[11] Ross, S., A first course in probability (Collier Macmillan, New York, 1976), chapter 1.Google Scholar