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A PAIR-DIFFUSION MODEL FOR ARSENIC IN SILICON CONSIDERING ARSENIC DEACTTVATION-INDUCEDINTERSTITIAL-SDLICON EMISSION

Published online by Cambridge University Press:  15 February 2011

Masayuki Hiroi ,
Takeo Ikezawa ,
Masami Hane  and
Hiroshi Matsumoto
Masayuki Hiroi
Affiliation:
Microelectronics Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara Kanagawa 229–11, JAPAN, [email protected]
Takeo Ikezawa
Affiliation:
NEC informatie systems, 1120, Shimokuzawa, Sagamihara Kanagawa 229–11, JAPAN
Masami Hane
Affiliation:
Microelectronics Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara Kanagawa 229–11, JAPAN, [email protected]
Hiroshi Matsumoto
Affiliation:
Microelectronics Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara Kanagawa 229–11, JAPAN, [email protected]
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Abstract

An arsenic diffusion model was proposed with the emphasis on a new deactivation process which accounts for excess interstitial silicon generation. Appropriate parameter set for the binding energies of arsenic-point defect pairs were obtained for reproducing various arsenic activation levels and interaction with boron in the case of co-diffusion. Such parameters were extracted from the data of carefully performed secondary ion mass spectroscopy with lowering the primary beam energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 371
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Fahey, P.M., Griffin, P.B. and Plummer, J.D., Rev. Mod. Phys., 61, 289, (1989).Google Scholar
[2] Crowder, S.W., Rosseau, P.M., Snyder, J.P., Scott, J.A., Griffin, P.B. and Plummer, J.D., Proc. IEDM- 95, 427 (1995).Google Scholar
[3] Orlowski, M., Subrahmanyan, R. and Huffinan, G., J. Appl. Phys., 71, 164 (1992).Google Scholar
[4] Fahey, P., Barbuscia, G., Moslehi, M. and Dutton, R. W., Appl. Phys. Lett., 46, 784 (1985).Google Scholar
[5] Novell, Paul and Law, Mark E., Proc. NUPAD-VI, 41 (1992).Google Scholar
[6] Vandenbossche, Eric, Jaouen, Hereve and Baccus, Bruno, Proc. IEDM- 95, 81 (1995).Google Scholar
[7] Rosseau, P.M., Griffin, P.B., Kuehne, S.C., Plummer, J.D., Proc. IEDM- 95, 861 (1994).Google Scholar
[8] Tsai, M. Y., Morehead, F.F., Baglin, J.E.E., Michel, A.E., J. Appl. Phys., 51, 3230 (1980).Google Scholar
[9] Richard Fair, B. in impurity doping process in silicon edited by Wang, F.F.Y. (North-Holland, 1981), p. 315–442.Google Scholar
[10] Mathiot, Daniel and Scheiblin, Pascal, Electrochem. Soc. Proc. 95–5, 13 (1995).Google Scholar
[11] Clejan, Iuval and Dunham, Scott, Electrochem. Soc. Proc. Vol. 95–5, 21 (1995).Google Scholar
[12] Fair, R.B., Wortman, J.J. and Liu, J., J. Electrochem. Soc, 131, 2387 (1984).Google Scholar
[13] Kanemura, T. and Aoki, N., IEICE Tech. Report, 95–232, 15 (1995).Google Scholar
[14] Bronner, G.B. and Plummer, J.D., J. Appl. Phys., 61, 5286 (1987).Google Scholar
[15] Ghaderi, K. and Hobler, G., J. Electrochem. Soc, 142, 1654 (1995).Google Scholar
[16] Mathiot, D. and Pfister, J.C., J. Appl. Phys., 55, 3518 (1984).Google Scholar
[17] Tan, Y. and Gösele, U., Appl. Phys. A, 37, 1 (1985).Google Scholar
[18] Hoyt, J.L. and Gibbons, J.F., Mat. Res. Soc. Symp. Proc, 52, 15 (1986).Google Scholar
[19] Jüngling, W., Picher, P., Selberherr, S., Guerrero, E., and Pötzl, H., IEEE Trans. Electron Devices, ED- 32, 156 (1985).Google Scholar
[20] Jones, K.S., Prussin, S. and Weber, E.R., Appl. Phys., A45, 1 (1988).Google Scholar
[21] Chao, H.S., Crowder, S.W., Griffin, P.B. and Plummer, J.D., J. Appl. Phys., 79, 2352 (1996).Google Scholar
[22] Ho, C.P., Plummer, J.D., Hansen, S.E., and Dutton, R.W., IEEE trans. Electron Devices, 30, 1438 (1983).Google Scholar