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Ozone-Based Atomic Layer Deposition of HfO2 and HfxSi1-xO2 and Film Characterization

Published online by Cambridge University Press:  28 July 2011

Yoshihide Senzaki ,
Seung Park ,
Douglas Tweet ,
John F. Conley Jr.  and
Yoshi Ono
Yoshihide Senzaki
Affiliation:
AVIZA Technology 440 Kings Village Road, Scotts Valley, CA, 95066, USA
Seung Park
Affiliation:
AVIZA Technology 440 Kings Village Road, Scotts Valley, CA, 95066, USA
Douglas Tweet
Affiliation:
SHARP Laboratories of America, 5700 NW Pacific Rim Blvd., Camas, WA, USA
John F. Conley Jr.
Affiliation:
SHARP Laboratories of America, 5700 NW Pacific Rim Blvd., Camas, WA, USA
Yoshi Ono
Affiliation:
SHARP Laboratories of America, 5700 NW Pacific Rim Blvd., Camas, WA, USA
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Abstract:

New ALD processes for hafnium silicate films have been developed at Aviza Technology by co-injection of tetrakis(ethylmethylamino)hafnium and tetrakis(ethylmethylamino)silicon precursors. Alternating pulses of the Hf/Si precursor vapor mixture and ozone allow process temperatures below 400°C to grow HfxSi1-xO2 films. Film characterization, including film density, crystallinity, and thermal anneal effect, was performed on five 20 nm thick HfxSi1-xO2 films where x = 0.2, 0.4, 0.6, 0.8, 1.0. X-ray measurements revealed the film densities and thicknesses for the as-deposited and 1000°C annealed samples. The densification with anneals seen in the optical measurements were confirmed. The as-deposited amorphous HfO2 and Hf0.8Si0.2O2 were crystallized after a 600°C anneal. The HfO2 formed the well known monoclinic phase while the silicate formed a face-centered-cubic (fcc) structure. This fcc phase has only recently been mentioned in the literature [1].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D7.4
Copyright
Copyright © Materials Research Society 2004

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References

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