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Oxygen-Trapping and Oxidation Induced by Laser Irradiation in Silicon

Published online by Cambridge University Press:  15 February 2011

Yung S. Liu ,
Shin-Wu Chiang  and
W. Katz
Yung S. Liu
Affiliation:
General Electric Research and Development CenterSchenectady, New York 12345, USA
Shin-Wu Chiang
Affiliation:
General Electric Research and Development CenterSchenectady, New York 12345, USA
W. Katz
Affiliation:
General Electric Research and Development CenterSchenectady, New York 12345, USA
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Abstract

Rapid oxidation in silicon induced by nanosecond UV laser pulses has been recently reported [1]. A significant amount of oxygen was observed to be incorporated in theregrown silicon layer when irradiation took place in air or in oxygen ambient. The fundamental interaction and transport kinetics involved include: incorporation of impurity during surface melting, trapping of solute during resolidification, and rapid reaction to form chemical bonds. The present study has investigated the mechanism of oxygen incorporation and trapping under various regrowth conditions. Oxygen depth-concentration distributions were analyzed using secondary-ion-mass spectroscopy (SIMS). The oxide formed was studied using differential Fourier-Transformed IR (FT-IR) spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 249
Copyright
Copyright © Materials Research Society 1982

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References

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