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Oxygen related shallow acceptor in GaN

Published online by Cambridge University Press:  01 February 2011

B. Monemar ,
P. P. Paskov ,
F. Tuomisto ,
K. Saarinen ,
M. Iwaya ,
S. Kamiyama ,
H. Amano ,
I. Akasaki  and
S. Kimura
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
P. P. Paskov
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
F. Tuomisto
Affiliation:
Laboratory of Physics, Helsinki University of Technology, P. O. Box 1100, HUT 02015, Finland
K. Saarinen
Affiliation:
Laboratory of Physics, Helsinki University of Technology, P. O. Box 1100, HUT 02015, Finland
M. Iwaya
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
S. Kamiyama
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
S. Kimura
Affiliation:
Sumitomo Seika Chemicals Co Ltd, J5–33, 4-Chome Kitahama, Chuo-ku, Osaka 541–0041, Japan
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Abstract

We report on deliberate O doping of GaN epitaxial layers during MOCVD growth, using H2O and CO2 as precursors. The photoluminescence spectra show a dominant 3.27 eV emission at 2 K known to be a donor-acceptor pair (DAP) transition. In our samples the intensity of this DAP spectrum correlates with the commonly observed 3.466 eV acceptor bound exciton (ABE) peak, suggesting these spectra are related to the same acceptor. The general correlation of these acceptor spectra with O concentration (as established with SIMS data) suggest that the acceptor is O-related, most likely a VGa-O complex. The concentration was measured with positron annihilation spectroscopy and found to be in the 1016 cm−3 -1017 cm−3 range in different samples. Considering previous results the identity of this residual acceptor is suggested to be a VGa-O-H complex. Previous suggestions that this acceptor is related to Mg, Si or C are discussed and found to be less likely.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E5.10
Copyright
Copyright © Materials Research Society 2005

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References

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