We report on an investigation of ‘buried’ oxygen implants formed by 0+ implantation at 400 KeV and 3.5 MeV into p-type CZ (100) wafers with a dopant density NA 1015 cm−3. Peak concentrations of 1 × 1019 cm−3 to 2 × 1020 cm−3. were investigated. Test devices were fabricated on implanted and annealed wafers using conventional wafer processing. For the 400 keV implants, a 4 µm epitaxial buffer layer was grown subsequent to the 0+ implant. For a dose of 3 × 1015 cm−2 the lifetime reduction ratio for the effective generation lifetime τg at the implant peak is greater than 103 relative to an unimplanted region where τg = 150 µS. C-V and SRP profiles show evidence for oxygen donor compensation. TEM analysis reveals a well defined layer at 1 µm with respect to the original implant surface containing a relatively high density of small precipitates and dislocation loops. DLTS measurements on diodes reveal 2 electron traps designated as E1 and E2. The trap energy ∆E and capture cross section σ are (EC-ET)1 = 0.41 ± 0.020 eV and (EC-ET)2 = 0.22 ± 0.030 eV with σ 1019 cm-3. The estimated trap density NT for the dominant trap is 8.2 × 1013 cm−3 for a calculated peak 0+ implant concentration of 6.8 × 1019 cm−3. The values of ∆E are in good agreement with values for unimplanted CZ wafers subjected to 2-step precipitation anneals. The experimental results provide direct evidence that ion implantation provides an effective method of introducing atomic oxygen in silicon at concentration exceeding its solid solubility during processing to produce a buried low lifetime region.